MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJK3400AH


MOSFET SOT-23-3L RoHS
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Changjing Electronics Technology 485
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AUD 0.0744
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40N15L-TF1-T


TO-220F MOSFETs ROHS
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Unisonic 482
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AUD 0.7312
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IPA60R160P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
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Infineon 482
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AUD 1.955
Multiples of: 1

            Coolmos P6      
TPM60PB3S8-2


SOP-8 MOSFETs ROHS
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TECH PUBLIC 481
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AUD 0.4298
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IRFI630GPBF


MOSFET RECOMMENDED ALT 844-IRFI630GPBF
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Vishay 481
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AUD 1.1701
Multiples of: 1

   N Channel      TO - 220 - 3Tube       
IPP65R190CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 481
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AUD 2.4278
Multiples of: 1

12 A650 V190 mOhmsN - Channel 4.5 V- 40 C+ 150 C63 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V23 nCEnhancement  
FDB86563_F085


Fairchild Semiconductor MOSFET
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ON Semiconductor 481
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AUD 7.1362
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110 A60 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C333 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V126 nCEnhancement Powertrench
TSM2N7002KDCU6 RF-VB


60V 2 N-Channel SC70-6 MOSFETs ROHS
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VBsemi Elec 480
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AUD 0.0776
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ST18N10D


100V 18A 80W null TO-252-2 MOSFETs ROHS
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STANSON Tech 480
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AUD 0.0935
Multiples of: 5

                   
IPB029N06NF2S


TO-263-3 MOSFETs ROHS
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Infineon 403
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AUD 2.1991
Multiples of: 1

                   
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