MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISZ143N13NM6ATMA1


MOSFETs N
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Infineon 480
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AUD 1.7896
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54 A135 V14.3 mOhmsN - Channel 3.5 V  95 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V21 nCEnhancement  
IPA65R380E6


MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS E6
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Infineon 480
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AUD 1.8144
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10.6 A650 V340 mOhmsN - Channel  - 55 C+ 150 C31 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V39 nC  Coolmos
SQ7415AENW-T1_GE3


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Vishay 480
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AUD 2.2394
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16 A60 V50 mOhmsP - Channel 2.5 V- 55 C+ 175 C53 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V38 nCEnhancementAec - Q101Trenchfet
IRF7749L1TRPBF


N-Channel 60 V 33A (Ta), 200A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
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Infineon 480
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AUD 3.5504
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200 A60 V1.1 mOhmsN - Channel20 V2.9 V- 55 C+ 175 C125 WSmd/SmtDirectfet - 15 L8Reel   200 nC  Directfet
PSMN7R0-100ES,127


MOSFET Single NChannel 100V 475A 269W 12mOhms
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Nexperia 480
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AUD 3.8946
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85 A90 V12 mOhmsn - channel 3 V  269 Wthrough holeTO - 262 - 3Rail/Tubesi1 channel20 V enhancement  
IXTH80N20L


MOSFET Standard Linear Power MOSFETs
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IXYS 480
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AUD 17.2881
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80 A200 V32 mOhmsn - channel  - 55 C+ 150 C520 Wthrough holeTO - 247 - 3Tubesi 20 V180 nCenhancement  
TP65H050WSQA


MOSFET GAN FET 650V 36A TO247
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Transphorm 480
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AUD 22.3846
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WML15N50D1B


Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
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Wayon 478
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AUD 0.5663
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            WMOS D1      
R6024KNX


MOSFET Nch 600V 24A Si MOSFET
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ROHM 470
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AUD 2.0851
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   N Channel       Bulk       
FDP120N10


MOSFET N Chan 100V 12Mohm
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ON Semiconductor 455
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AUD 2.0687
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74 A100 V12 mOhmsN - Channel  - 55 C+ 175 C170 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Powertrench
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