MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6012ANX


N-Channel 600 V 12A (Ta) 50W (Tc) Through Hole TO-220FM
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ROHM 485
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AUD 4.1136
Multiples of: 1

12 A600 V420 mOhmsN - Channel   + 150 C50 WThrough HoleTO - 220 - 3 FPBulkSi      
R6015FNX


ROHM Semiconductor MOSFET Trans MOSFET N-CH 600V 15A
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ROHM 485
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AUD 4.9937
Multiples of: 1

15 A600 V350 mOhmsN - Channel     Through HoleTO - 220 - 3BulkSi1 Channel     
STP310N10F7


Transistor: N-MOSFET; unipolar; 100V; 120A; 315W; TO220-3
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STMicroelectronics 485
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AUD 5.1478
Multiples of: 50

                   
R5011FNX


N-Channel 500 V 11A (Ta), 5.4A (Tc) 50W (Tc) Through Hole TO-220FM
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ROHM 485
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AUD 5.1538
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11 A500 V520 mOhmsN - Channel     Through HoleTO - 220 - 3BulkSi1 Channel     
IPI041N12N3 G


MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
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Infineon 485
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AUD 5.9038
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120 A120 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V211 nCEnhancement Optimos
R5021ANX


MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
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ROHM 485
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AUD 6.7041
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21 A500 V160 mOhmsN - Channel 2.5 V + 150 C50 WThrough HoleTO - 220 - FP - 3BulkSi1 Channel30 V64 nCEnhancement  
SIHG47N65E-GE3


Vishay Semiconductors MOSFET 650V 72mOhm10V 47A N-Ch E-SRS
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Vishay 485
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AUD 7.6679
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47 A700 V72 mOhmsN - Channel20 V2 v to 4 V- 55 C+ 150 C417 WThrough HoleTO - 247 - 3BulkSi1 Channel30 V273 nCEnhancement E Series
IPP65R041CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 485
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AUD 9.4008
Multiples of: 1

50 A650 V41 mOhmsN - Channel 4.5 V- 55 C+ 150 C227 WThrough Hole TubeSi1 Channel- 20 V , + 20 V102 nCEnhancement  
WMO09N15TS


Transistor: N-MOSFET; unipolar; TO252
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Wayon 484
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AUD 0.2925
Multiples of: 1

                   
STP23N80K5


MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSFET in a TO-220 package
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STMicroelectronics 12
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AUD 4.3682
Multiples of: 1

16 A800 V280 mOhmsn - channel 4 V- 55 C+ 150 C190 Wthrough holeTO - 220 - 3 si1 channel+/- 30 V33 nCenhancement  
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