MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSP200N02


MOSFET N Channel 200V 70A 5V @ 250uA 33mΩ @ 60A,10V TO-220 RoHS
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HUASHUO 485
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AUD 2.3158
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BSZ123N08NS3 G


Infineon Technologies MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
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Infineon 485
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AUD 2.3424
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10 A80 V12.3 mOhmsN - Channel20 V2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V25 nCEnhancement Optimos
R5007ANX


MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
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ROHM 485
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AUD 2.3959
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7 A500 V800 mOhmsN - Channel 2.5 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3BulkSi1 Channel30 V13 nCEnhancement  
IPI120N04S4-02


MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2
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Infineon 485
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AUD 2.4946
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120 A40 V1.8 mOhmsN - Channel     Through HoleTO - 262 - 3TubeSi1 Channel   Aec - Q101Optimos
R6006ANX


N-Channel 600 V 6A (Tc) 40W (Tc) Through Hole TO-220FM
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ROHM 485
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AUD 2.4974
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6 A600 V1.2 OhmsN - Channel    40 WThrough HoleTO - 220BulkSi1 Channel30 V15 nC   
IPP073N13NM6AKSA1


MOSFETs N
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Infineon 485
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AUD 2.5284
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98 A135 V7.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C158 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V43 nCEnhancement  
SUP80090E-GE3


MOSFET 150V Vds 20V Vgs TO-220
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Vishay 485
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AUD 2.9498
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128 A150 V7.8 mOhmsn - channel 2 V- 55 C+ 175 C375 Wthrough holeTO - 220 - 3Tubesi1 channel20 V95 nCenhancement thunderfet
SIHG25N50E-GE3


Vishay Semiconductors MOSFET 500V 26A 145mOhms10V
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Vishay 485
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AUD 3.2854
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26 A500 V145 mOhmsN - Channel 4 V- 55 C+ 150 C250 WThrough HoleTO - 247AC - 3TubeSi1 Channel20 V57 nCEnhancement E Series
IPP60R099P6


Infineon Technologies MOSFET HIGH POWER PRICEPERFORM
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Infineon 481
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AUD 3.9567
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100 A600 V99 OhmsN - Channel 3.5 V- 55 C+ 150 C278 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V70 nCEnhancement Coolmos
IPP023NE7N3GXKSA1


Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
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Infineon 375
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AUD 2.3642
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120 A75 V2.1 mOhmsN - Channel 2.3 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V206 nCEnhancement Optimos
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