MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS5C426NAFT1G-YE


MOSFETs T6-D3F 40V NFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 505
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 1.1279

Multiples of: 1

235 A40 V1.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C128 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V65 nCEnhancement  
2N6660


Transistor: N-MOSFET; unipolar; 60V; 1.5A; TO39
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Microchip 492
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between Fri. 31 Jul to Thu. 06 Aug
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AUD 26.8284

Multiples of: 1

   N Channel               
SMF14N65


650V 14A 54W 750mO@10V,7A N Channel TO-220F-3 MOSFETs ROHS
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HUAKE 491
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 0.7397

Multiples of: 1

                   
SI7149ADP-T1-GE3


Vishay Semiconductors MOSFET -30V 5.2mOhm10V -50A P-Ch G-III
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Vishay 491
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between Fri. 31 Jul to Thu. 06 Aug
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AUD 0.84

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- 50 A- 30 V5.2 mOhmsP - Channel - 2.5 V- 55 C+ 150 C48 WSmd/SmtPOWERPAK - SO - 8Reel  25 V43.1 nCEnhancement Trenchfet Power Mosfet
NVMYS6D2N06CLTWG


MOSFET T6 60V LL LFPAK
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ON Semiconductor 491
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 0.9522

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           Cut Tape       
UF3C065080T3S


MOSFET 650V80mOhm SiC FAST CASCODE G3 TO-220-3L REDUCED Rth
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UnitedSiC 491
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 9.2243

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31 A650 V100 mOhmsN - Channel 4 V- 55 C+ 175 C190 WThrough HoleTO - 220 - 3TubeSic1 Channel25 V51 nCEnhancement  
IXTH16N20D2


MOSFET N-CH 200V 16A MOSFET
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IXYS 491
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 24.3313

Multiples of: 1

16 A200 V80 mOhmsn - channel  - 55 C+ 150 C695 Wthrough holeTO - 247 - 3Tubesi1 channel20 V208 nCdepletion  
IXFX140N30P


MOSFET 140 Amps 300V 0.024 Ohm Rds
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IXYS 491
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 28.0418

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140 A300 V24 mOhmsn - channel 5 V- 55 C+ 150 C1.04 kWthrough holeTO - 247 - 3Tubesi1 channel20 V185 nCenhancement hiperfet
DMN4060SVT-7


mosfet n trench 45v 4.8a 3v @ 250ua 46 m @ 4.3a,10v tsot-26 rohs
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Diodes Incorporated 488
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 0.2791

Multiples of: 1

4.8 A45 V46 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V22.4 nCEnhancement  
IPP60R125C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
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Infineon 240
Ships to you
between Fri. 31 Jul to Thu. 06 Aug
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AUD 4.1278

Multiples of: 1

            Coolmos C6      
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