MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQD20N06


60V 35A 25mO@10V,35A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 491
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AUD 0.4663
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IRF610STRLPBF


MOSFET N-Chan 200V 3.3 Amp
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Vishay 488
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AUD 1.2379
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         Smd/SmtTO - 263 - 3Tape And ReelSi   Enhancement  
NVMFS4C03NWFT1G


MOSFET NFET SO8FL 30V 138A 2.1MO
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ON Semiconductor 488
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AUD 1.7731
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         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
IPI120N04S4-01


Infineon Technologies MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2
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Infineon 488
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AUD 3.0119
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120 A40 V1.5 mOhmsN - Channel     Through HoleTO - 262 - 3TubeSi1 Channel   Aec - Q101Optimos
AO4492


MOSFET N CH 30V 14A SOIC 8
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Alpha & Omega 487
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AUD 0.6736
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           -       
IPTC020N13NM6ATMA1


MOSFETs N
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Infineon 487
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AUD 6.091
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297 A135 V2 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V159 nCEnhancement  
IPN80R2K0P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 1.9A; 6.4W; PG-SOT223
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Infineon 486
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AUD 0.504
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            Coolmos P7      
IPTG007N06NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 486
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AUD 4.0552
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454 A60 V750 uOhmsN - Channel 3.3 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V209 nCEnhancement  
IRLL110TRPBF-BE3


MOSFET 100V N-CH
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Vishay 253
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AUD 1.0097
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1.5 A100 V540 mOhmsN - Channel 2 V- 55 C+ 150 C3.1 WSMD/SMTSOT - 223 - 4Cut Tape , ReelSi1 Channel- 10 V , + 10 V6.1 nCEnhancement  
FDMQ8403


MOSFET SER BOOST LED DRVR
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ON Semiconductor 38
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AUD 2.9552
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3 A100 V110 mOhmsN - Channel  - 55 C+ 150 C1.9 WSmd/SmtMLP 4.5 x 5ReelSi4 Channel20 V   Powertrench
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