MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLS3034TRLPBF


Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
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Infineon 3282
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AUD 2.2164
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343 A40 V1.7 mOhmsN - Channel 2.5 V + 175 C375 WSmd/SmtD2PAKReelSi1 Channel 162 nC   
R6535KNZ4C13


MOSFETs Transistor MOSFET, Nch 650V 35A 3rd Gen, Fast Switch
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ROHM 497
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AUD 6.1567
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35 A650 V115 mOhmsN - Channel 5 V- 55 C+ 150 C379 WThrough HoleTO - 247G - 3TubeSi1 Channel- 20 V , 20 V72 nCEnhancement  
IPD90P03P404ATMA1


MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2
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Infineon 496
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AUD 1.3742
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90 A30 V3.6 mOhmsP - Channel 4 V- 55 C+ 175 C137 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V130 nCEnhancementAec - Q101 
IPA60R190C6XKSA1


Infineon Technologies MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6
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Infineon 496
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AUD 2.1179
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59 A650 V190 mOhmsN - Channel 3 V- 55 C+ 150 C34 WThrough HoleTO - 220 - FP - 3Tube-1 Channel+/- 20 V63 nCEnhancement Coolmos
IXTA60N20X4


MOSFET 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET
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IXYS 496
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AUD 11.7388
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60 A200 V21 mOhmsN - Channel 4.5 V- 55 C+ 175 C250 WSMD/SMTTO - 263 - 3TubeSi1 Channel- 20 V , 20 V11 nCEnhancement X4 - Class
CSD13383F4T


Texas Instruments MOSFET 12V N-Channel FemtoFET MOSFET
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Texas Instruments 495
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AUD 0.5681
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2.9 A12 V44 mOhmsN - channel 1 V- 55 C+ 150 C500 mWSmd/smtSMD - 3ReelSi1_Channel10 V2 nCEnhancement Femtofet
NCEP028N85D


85V 200A 245W 2.4mΩ@10V,100A 3V@250uA N Channel TO-263 MOSFETs ROHS
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NCE Power 495
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AUD 1.921
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LN2306ELT1G


30V 3.4A 65m 1PCSNChannel SOT-23 MOSFETs ROHS
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Leshan 494
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AUD 0.0387
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IRLML6401


20V 5A 1.31W 45mΩ@4.5V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 494
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AUD 0.0413
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FDD86113LZ


MOSFET 100/20V PT5 N-Chan PowerTrench MOSFET
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ON Semiconductor 492
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AUD 1.5066
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4.2 A100 V104 mOhmsN - Channel  - 55 C+ 150 C3.1 WSmd/SmtTO - 252 (DPAK)ReelSi1 Channel    Powertrench
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