MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB18N60DM2


Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 7760
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AUD 1.566
Multiples of: 1000

            Supermesh      
DMN6040SSS-13


MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
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Diodes Incorporated 499
Ships to you
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AUD 0.2799
Multiples of: 5

5.5 A60 V40 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8Cut TapeSi1 Channel10 V22.4 nCEnhancement  
IRF820ALPBF


MOSFET N-Chan 500V 2.5 Amp
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 499
Ships to you
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AUD 1.3266
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 262TubeSi      
UF630L-TA3-T


MOSFET N Trench 200V 9A (Tc) 4V @ 250uA 400 mΩ @ 5A,10V TO-220 (TO-220-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Unisonic 498
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AUD 0.3093
Multiples of: 1

                   
APT28M120B2


MOSFET FG, MOSFET, 1200V, TO-247 T-MAX
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Microchip 498
Ships to you
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AUD 35.4554
Multiples of: 1

29 A1200 V530 mOhmsN - Channel 4 V- 55 C+ 150 C1.135 kWThrough HoleTMAX - 3ReelSi +/- 30 V300 nCEnhancement  
DP3080B


TO-252 MOSFETs ROHS
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Developer Microelectronics 497
Ships to you
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AUD 0.1725
Multiples of: 1

                   
IRFR9310PBF


P-Channel 400 V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak
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Vishay 497
Ships to you
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AUD 0.8379
Multiples of: 1

           TubeSi      
IRFI740GPBF


MOSFET RECOMMENDED ALT 844-IRFI740GPBF
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Vishay 494
Ships to you
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AUD 1.2328
Multiples of: 1

5.4 A400 V550 mOhmsN - Channel 2 V- 55 C+ 150 C40 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V66 nCEnhancement  
NTMFS6H801NLT1G


MOSFET T8 80V LL SO8FL
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ON Semiconductor 31
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AUD 2.028
Multiples of: 1

                   
DMN6013LFG-7


Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.6613
Multiples of: 1

10.3 A60 V12.3 mOhmsN - Channel 1.8 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel20 V26.6 nCEnhancement Dmn6
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