MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF3N25


Fairchild Semiconductor MOSFET 250V N-Channel QFET
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ON Semiconductor 811
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AUD 0.6517
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2.3 A250 V2.2 OhmsN - Channel30 V - 55 C+ 150 C27 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Qfet
WM10N02M


Transistor: N-MOSFET; unipolar; SOT23
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Wayon 554
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AUD 0.0439
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HSH10P20


TO-263 MOSFETs ROHS
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HUASHUO 554
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AUD 0.8634
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WGD13N50SE


500V 13A 50W 500m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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Wild Goose 553
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AUD 0.3558
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MOT10N70F


700V 10A 35W 1@10V,5A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
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MOT 553
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AUD 0.3776
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IPA65R400CEXKSA1


MOSFET CONSUMER
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Infineon 553
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AUD 0.8028
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 650 V       Through HoleTO - 220FP - 3TubeSi     Coolmos
IXTT02N450HV


N-Channel 4500 V 200mA (Tc) 113W (Tc) Surface Mount TO-268AA
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IXYS 553
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AUD 41.6851
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200 mA4.5 kV625 Ohmsn - channel 4 V- 55 C+ 150 C113 Wsmd/smtTO - 268HV - 3Tubesi1 channel10 V10.6 nCenhancement  
ST2319SRG


40V 3.5A 75mΩ@10V,3A 1.2W 1.5V@250uA P Channel SOT-23 MOSFETs ROHS
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STANSON Tech 552
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AUD 0.0314
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IPW60R190P6


Infineon Technologies MOSFET HIGH POWER_PRCPRFRM
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Infineon 544
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AUD 2.5612
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6 A600 V190 OhmsN - Channel 3.5 V- 55 C+ 150 C151 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V37 nCEnhancement Coolmos
YJL2301D


Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
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Yangjie 543
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AUD 0.0377
Multiples of: 10

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