MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR3410TRLPBF


MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv
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Infineon 9525
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AUD 0.4769
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15 A100 V155 mOhmsN - Channel    52 WSmd/SmtDPAKReelSi1 Channel16 V22.7 nC   
DMP1009UFDF-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 1255
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AUD 0.6702
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11 A12 V8.3 mOhmsP - Channel 1 V- 55 C+ 150 C2 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel8 V44 nCEnhancement  
STB24N60DM2


Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
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STMicroelectronics 970
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AUD 1.8791
Multiples of: 1000

            Supermesh      
R8011KNZ4C13


MOSFETs TO247 800V N CH 3.5A
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ROHM 562
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AUD 6.1239
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11 A800 V450 mOhmsN - Channel 4.5 V- 55 C+ 150 C139 WThrough HoleTO - 247G - 3TubeSi1 Channel30 V37 nCEnhancement  
R6576KNZ4C13


MOSFET 650V 76A TO-247, High-speed switching Power MOSFET
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ROHM 561
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AUD 15.5149
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76 A650 V46 mOhmsN - Channel 5 V- 55 C+ 150 C735 WThrough HoleTO - 247G - 3TubeSi1 Channel- 20 V , + 20 V165 nCEnhancement  
FDMC15N06


Fairchild Semiconductor MOSFET UltraFET 55V, 15A
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ON Semiconductor 560
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AUD 1.1887
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15 A55 V75 mOhmsN - Channel  - 55 C+ 150 C35 WSmd/SmtMLP - 6ReelSi1 Channel    Ultrafet
IRFP460HPBF


MOSFETs Power MOSFET, 270 mO 10V
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Vishay 560
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AUD 4.0881
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20 A500 V270 mOhmsN - Channel 4 V- 55 C+ 150 C329 WThrough HoleTO - 247AC - 3TubeSi1 Channel- 30 V , + 30 V77 nC   
IPP100N10S3-05


MOSFET OptiMOS-T PWR TRANS 100V 100A
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Infineon 560
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AUD 6.1698
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100 A100 V4.8 mOhmsN - Channel  - 55 C+ 175 C300 WThrough HoleTO - 220TubeSi1 Channel20 V EnhancementAec - Q101Optimos
R6547ENZ4C13


MOSFET 650V 47A TO-247, Low-noise Power MOSFET
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ROHM 560
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AUD 9.4808
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47 A650 V80 mOhmsN - Channel 4 V- 55 C+ 150 C480 WThrough HoleTO - 247G - 3TubeSi1 Channel- 20 V , + 20 V150 nCEnhancement  
HSBA30N20


PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 248
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AUD 0.6879
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