MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOB42S60L


Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO263
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Alpha & Omega 580
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AUD 7.3134
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R6035KNZC17


MOSFET 600V 35A TO-3PF, High-speed switching Power MOSFET
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ROHM 580
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AUD 7.8654
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35 A600 V102 mOhmsN - Channel 5 V- 55 C+ 150 C102 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 20 V , + 20 V72 nCEnhancement  
STW56N65DM2


Transistor: N-MOSFET; unipolar; 650V; 30A; 360W; TO247
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STMicroelectronics 580
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AUD 9.2597
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            Mdmesh      
IPW60R041C6


MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6
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Infineon 580
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AUD 12.494
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77.5 A600 V37 mOhmsN - Channel 2.5 V- 55 C+ 150 C481 WThrough HoleTO - 247TubeSi1 Channel20 V290 nCEnhancement Coolmos
FQB27N25TM_F085


MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET
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ON Semiconductor 579
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AUD 3.4615
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25.5 A250 V108 mOhmsN - Channel30 V4.1 V- 55 C+ 150 C417 WSmd/SmtTO - 263 - 3ReelSi1 Channel30 V45 nC  Ultrafet
FQA90N15_F109


Fairchild Semiconductor MOSFET 150V 90A N-Chan Power Trench
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ON Semiconductor 579
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AUD 5.1772
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90 A150 V18 mOhmsN - Channel  - 55 C+ 175 C6 WThrough HoleTO - 3P - 3TubeSi1 Channel25 V Enhancement Qfet
TP65H035WSQA


MOSFET GAN FET 650V 47.2A TO247
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Transphorm 579
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AUD 27.4038
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47.2 A650 V41 mOhmsN - Channel 3.4 V- 55 C+ 175 C187 WThrough HoleTO - 247 - 3 Gan Si1 Channel20 V24 nCEnhancement  
NVTFWS005N08XLTAG


MOSFETs T10S 80V LL NCH MOSFET U8FL HE WF
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ON Semiconductor 578
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AUD 0.9664
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79 A80 V5.3 mOhmsN - Channel 2.1 V- 55 C+ 175 C82 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V28 nCEnhancement  
BSC057N08NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 476
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AUD 1.0672
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100 A80 V4.7 mOhmsN - Channel 2 V- 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V56 nCEnhancement Optimos
Hot IRFR3710ZTRPBF


MOSFET N Trench 100V 42A 4V @ 250uA 18 mΩ @ 33A,10V TO-252-2 (DPAK) RoHS
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Infineon 236
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AUD 0.7602
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56 A100 V18 mOhmsN - Channel 4 V + 175 C140 WSmd/SmtDPAKReelSi1 Channel 100 nC   
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