MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPF031N13NM6ATMA1


MOSFETs N
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Infineon 697
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AUD 4.8761
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207 A135 V3.1 mOhmsN - Channel 3.5 V- 55 C+ 175 C294 WSMD/SMTTO263 - 7Reel , Cut TapeSi1 Channel- 20 V , + 20 V104 nCEnhancement  
AUIRF3305


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms
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Infineon 697
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AUD 5.0373
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140 A55 V8 mOhmsn - channel  - 55 C 330 Wthrough holeTO - 220 - 3Tubesi1 channel20 V100 nCenhancementaec - q101 
IXTP94N20X4


N-Channel 200V 94A (Tc) 360W (Tc) Through Hole TO-220
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IXYS 697
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AUD 14.7761
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94 A200 V10.6 mOhmsN - Channel 4.5 V- 55 C+ 175 C360 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V77 nCEnhancement  
CS70N30ANR


TO-3P MOSFETs ROHS
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CRMICRO 696
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AUD 2.6728
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FDBL86066-F085


MOSFET PTNG 100V N-FET TOLL 240A 4.1 mOhm
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ON Semiconductor 696
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AUD 4.0845
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240 A100 V4.1 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtH - PSOF - 8Cut TapeSi1 Channel20 V69 nCEnhancementAec - Q101 
FDP4D5N10C


MOSFET FET 100V 128A 4.5 mOhm
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ON Semiconductor 696
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AUD 4.9516
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128 A100 V4.5 mOhmsN - Channel 2 V- 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V68 nCEnhancement  
SP010N02GHTD


100V 270A 1.9m 1 N-Channel TO-263 MOSFETs ROHS
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Siliup 696
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AUD 1.4556
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RQ1E070RPTR


ROHM Semiconductor MOSFET MID PWR MOSFET SER
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ROHM 695
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AUD 0.7963
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7 A30 V12 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8ReelSi1 Channel20 V50 nCEnhancement  
ZVP0545A


TO-92-3 MOSFETs ROHS
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Diodes Incorporated 695
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AUD 1.1328
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50 mA350 V150 OhmsP - Channel  - 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
IRFR2905ZTRPBF


International Rectifier MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC
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Infineon 12
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AUD 0.5401
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59 A55 V14.5 mOhmsN - Channel20 V4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3Reel   29 nCEnhancement  
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