MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123


100V 200mA 300mW 1.06O@10V,200mA N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Bourne 6440
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AUD 0.025
Multiples of: 20

                   
WNM2020-3/TR-VB


20V 6A 28mΩ@4.5V N Channel SOT23 MOSFETs ROHS
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VBsemi Elec 708
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AUD 0.0619
Multiples of: 10

                   
RQ5E030RPTL


P-Channel 30 V 3A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM 701
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AUD 0.2824
Multiples of: 1

3 A30 V75 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V5.2 nCEnhancement  
IPB65R190CFDA


Infineon Technologies MOSFET N-Ch 650V 57.2A D2PAK-2
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Infineon 701
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AUD 2.791
Multiples of: 1

17.5 A650 V171 mOhmsN - Channel 3.5 V- 40 C+ 150 C151 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V68 nCEnhancementAEC - Q100CoolMOS
FDS4470


40V 12.5A 2.5W 9mO@10V,12.5A N Channel SOIC-8 MOSFETs ROHS
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ON Semiconductor 700
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AUD 0.8658
Multiples of: 1

12.5 A40 V9 mOhmsn - channel  - 55 C+ 175 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel- 20 v , 30 V enhancement powertrench
IPS60R210PFD7SAKMA1


650V 16A 210mO@4.9A,10V 64W N Channel TO-251-3 MOSFETs ROHS
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Infineon 700
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AUD 1.1887
Multiples of: 1

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FCB099N65S3


MOSFET Power MOSFET N-Channel SUPERFET III Easy Drive 650 V 30 A 99 mO D2PAK Power MOSFET N-Channel SUPERFET III Easy Drive 650 V 30 A 99 mO D2PAK
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ON Semiconductor 700
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AUD 5.3687
Multiples of: 1

30 A650 V99 mOhmsN - Channel 4.5 V- 55 C+ 150 C227 WSMD/SMTD2PAK - 3Cut Tape , ReelSi1 Channel- 30 V , + 30 V61 nCEnhancement  
FQPF5P20RDTU


Fairchild Semiconductor MOSFET PCH 500V 2A MOSFET
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ON Semiconductor 699
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AUD 0.9801
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         Through HoleTO - 220FP - 3TubeSi     Qfet
HSP4048


MOSFET N Channel 40V 210A 2.2V @ 250uA 1.8mΩ @ 15A,10V TO-220 RoHS
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HUASHUO 699
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AUD 0.9871
Multiples of: 1

                   
FQPF9P25YDTU


Fairchild Semiconductor MOSFET
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ON Semiconductor 699
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AUD 1.5493
Multiples of: 1

- 6 A- 250 V480 mOhmsP - Channel - 5 V- 55 C+ 150 C50 WThrough HoleTO - 220 - 3 Si1 Channel30 V29 nCEnhancement Qfet
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