MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF9Z34NSTRLPBF-JSM


TO-263-2L MOSFETs ROHS
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JSMSEMI 709
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AUD 0.4935
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AUIRFS8409-7TRL


MOSFET Auto 40V N-Ch FET 0.97mOhm 195A
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Infineon 708
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AUD 5.106
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522 A40 V550 OhmsN - Channel     Smd/SmtD2PAK - 7ReelSi1 Channel   Aec - Q101Coolirfet
STW25N80K5


Transistor: N-MOSFET; unipolar; 800V; 12.3A; 250W; TO247
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STMicroelectronics 708
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AUD 5.4297
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            Mdmesh      
IRFP460PBF


TO-247 MOSFETs ROHS
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JSMSEMI 707
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AUD 1.6266
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STH410N4F7-6AG


STMicroelectronics MOSFET
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STMicroelectronics 707
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AUD 3.5955
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200 A40 V1.1 mOhmsn - channel 4 V- 55 C+ 150 C365 Wsmd/smtH2PAK - 6Reelsi1 channel40 V120 nCenhancementaec - q101stripfet
IXFP22N65X2


MOSFET MOSFET 650V/22A Ultra Junction X2
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IXYS 707
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AUD 5.5493
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22 A650 V160 mOhmsN - Channel 2.7 V- 55 C+ 150 C390 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V38 nCEnhancement HiPerFET
SQS840EN-T1_GE3


MOSFET 40V 12A 33W AEC-Q101 Qualified
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Vishay 706
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AUD 0.8586
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12 A40 V16.6 mOhmsN - Channel 2 V- 55 C+ 175 C33 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel20 V15 nCEnhancementAec - Q101Trenchfet
IPDQ65R029CFD7AXTMA1


MOSFETs AUTOMOTIVE_COOLMOS
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Infineon 706
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AUD 11.3448
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85 A650 V53 mOhms  4 V- 40 C+ 150 C463 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V139 nCEnhancement  
IPDQ60T010S7XTMA1


MOSFETs CoolMOS S7T with embedded temperature sensor
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Infineon 706
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AUD 24.003
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174 A600 V10 mOhmsN - Channel 4 V- 55 C+ 150 C694 WSMD/SMTPG - HDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V318 nCEnhancement CoolMOS
IPW60R040CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 705
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AUD 7.9791
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50 A600 V40 mOhmsN - Channel 3.5 V- 55 C+ 150 C227 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V109 nCEnhancement  
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