MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPW20N60C3FKSA1


MOSFET HIGH POWER_LEGACY
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Infineon 746
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AUD 3.8479
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   N Channel       Tube       
FDB016N04AL7


MOSFET 40V N-Channel PowerTrench MOSFET
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ON Semiconductor 745
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AUD 5.3143
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160 A40 V1.16 mOhmsN - Channel   + 175 C283 WSmd/SmtD2PAK - 7LReelSi1 Channel 129 nC  Powertrench
TPCP8105,LF(CM


Trans MOSFET P-CH Si 20V 7.2A 8-Pin PS T/R
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Toshiba 744
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AUD 0.4484
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TK20A60W5,S5VX


MOSFETs MOSFET NChtrr100ns 0.25ohm DTMOS
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Toshiba 744
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AUD 1.9699
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AOB11S65L


Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263
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Alpha & Omega 744
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AUD 3.1134
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IXFH140N10P


MOSFET 140 Amps 100V 0.011 Rds
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IXYS 744
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AUD 10.1955
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140 A100 V11 mOhmsN - Channel 5 V- 55 C+ 175 C600 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V155 nCEnhancement Hiperfet
HSH200N02


MOSFET N Channel 200V 70A 5.0V @ 250uA 33mΩ @ 30A,10V TO-263 RoHS
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HUASHUO 741
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AUD 2.1606
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AOD2606-MS


60V 80A 104W 6mΩ@10V,45A 1.4V@250uA 180pF@25V N Channel 2680pF@25V 33nC@4.5V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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MSKSEMI 741
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AUD 0.4145
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AGM6014A


60V 80A 54W 4.6m@10V,20A 1.6V@250uA 1PCSNChannel DFN(5x6) MOSFETs ROHS
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AGM-Semi 730
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AUD 0.4947
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IRFPG50PBF


N-Channel 1000 V 6.1A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 591
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AUD 3.5731
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6.1 A1 kV2 OhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V190 nCEnhancement  
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