MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG3414UQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 843
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AUD 0.4151
Multiples of: 5

         Smd/SmtSOT - 23 - 3Cut TapeSi    Aec - Q101 
NVF3055L108T1G


ON Semiconductor MOSFET NFET 60V 3A 0.120R
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ON Semiconductor 843
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AUD 0.6815
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3 A60 V120 mOhmsN - Channel15 V - 55 C+ 175 C2.1 WSmd/SmtSOT - 223 - 3ReelSi1 Channel15 V  Aec - Q101 
AUIRFN8458TR


International Rectifier MOSFET 40V Dual N Channel HEXFET
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Infineon 843
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AUD 1.7896
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43 A40 V10 mOhmsn - channel20 V3.9 V- 55 C+ 175 C34 Wsmd/smtPQFN - 8Reelsi2 channel20 V22 nCenhancementaec - q101 
IPB70N10S312ATMA1


Infineon Technologies MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
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Infineon 843
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AUD 2.3084
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70 A100 V9.4 mOhmsN - Channel 2 V- 55 C+ 175 C125 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V66 nCEnhancementAec - Q101 
2SK2463T100


MOSFET TRANS MOSFET N-CH 60V 2A TR
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ROHM 841
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AUD 0.5151
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2 A60 V450 mOhmsN - Channel 1 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtMPT3ReelSi1 Channel20 V    
SIHF9530S-GE3


MOSFETs
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Vishay 841
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AUD 1.0751
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VBE165R04


MOSFET N Channel 650V 4.5A(Tc) 5V @ 250uA 2.1Ω @ 3.1A,10V TO252 RoHS
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VBsemi Elec 840
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AUD 0.4882
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8N65KL-TF1-T


MOSFET N Trench 650V 8A 4V @ 250uA 1.4 O @ 4A,10V TO-220F (TO-220IS) RoHS
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Unisonic 840
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AUD 0.3768
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IPP200N25N3GXKSA1


Infineon Technologies MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3
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Infineon 839
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AUD 4.3836
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64 A250 V17.5 mOhmsN - Channel 2 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V86 nCEnhancement Optimos
IXFH52N50P2


MOSFET PolarP2 Power MOSFET
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IXYS 27
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AUD 7.7772
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52 A500 V120 mOhmsN - Channel 4.5 V- 55 C+ 150 C960 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V113 nCEnhancement HiPerFET
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