MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBG2024


MOSFET N Channel 20V 1.4A 1V @ 250uA 230mO @ 0.55A,4.5V DFN1006 RoHS
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HUASHUO 902
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AUD 0.0623
Multiples of: 10

                   
IPP129N10NF2SAKMA1


MOSFET TRENCH >=100V
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Infineon 893
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AUD 1.0064
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52 A100 V12.9 mOhmsN - Channel 3.8 V- 55 C+ 175 C71 WThrough Hole TubeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
RD3G07BBGTL1


MOSFETs RD3G07BBG is a power MOSFET with low on-resistance and high power package, suitable for switching.
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ROHM 893
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AUD 2.1836
Multiples of: 1

150 A40 V3.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C89 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V56 nCEnhancement  
BSS138AKDW


55V 300mA 1.2Ω@10V 280mW 2 N-Channel SOT-363 MOSFETs ROHS
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MSKSEMI 892
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AUD 0.0284
Multiples of: 20

                   
YJL3134KBX


SOT-563 MOSFETs ROHS
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Yangjie 892
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AUD 0.0371
Multiples of: 20

                   
SI2308-JSM


SOT-23 MOSFETs ROHS
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JSMSEMI 892
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AUD 0.0401
Multiples of: 10

                   
DMNH4011SK3Q-13


MOSFET 40V N-Ch Enh FET 175c 20Vgss 2.6W
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Diodes Incorporated 891
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AUD 0.8915
Multiples of: 1

           Cut Tape       
2N7002KW


SOT-323-3 MOSFETs ROHS
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Bourne 853
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AUD 0.0232
Multiples of: 20

                   
PNMT30V6


MOSFET N Trench 30V 5.8A 1.5V @ 250uA 40 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Prisemi 776
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AUD 0.0611
Multiples of: 10

                   
WPM2081-3/TR


20V 2.9A 43mO@4.5V,3.2A 660mW P Channel SOT-23 MOSFETs ROHS
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Will Semiconductor 126
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AUD 0.0744
Multiples of: 10

                   
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