MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK5A80E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 1187
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AUD 0.8378
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ZXMN6A08E6TA


N-Channel 60 V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
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Diodes Incorporated 1186
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AUD 0.5513
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   N - channel  - 55 C+ 150 C Smd/smtSOT - 23 - 6Reel       
PJQ5453E-AU_R2_002A1


MOSFETs 40V P-Channel Enhancement Mode MOSFET
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Panjit 1186
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AUD 0.7076
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61 A40 V11.3 mOhmsP - Channel 2.5 V- 55 C+ 175 C75 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V56 nCEnhancementAEC - Q101 
TPM2P106PS8


SOP-8 MOSFETs ROHS
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TECH PUBLIC 1186
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AUD 1.0427
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IPP076N15N5


MOSFET TRENCH >=100V
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Infineon 1186
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AUD 1.7629
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TN2404K-T1-GE3


MOSFET 240V 0.2A 0.36W 4.0ohms @ 10V
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Vishay 1186
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AUD 0.6446
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200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
IRFBF20STRLPBF


MOSFET N-Chan 900V 1.7 Amp
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Vishay 1185
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AUD 1.3627
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKReelSi      
2N7002AKRA-QZ


MOSFETs 60 V, dual N-channel Trench MOSFET
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Nexperia 1184
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AUD 0.0629
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320 mA60 V2.9 OhmsN - Channel 2.6 V- 55 C+ 150 C5 WSMD/SMTDFN1412 - 6 - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V210 pCEnhancement  
SI7489DP-T1-E3


Vishay Semiconductors MOSFET 100V 28A 83W
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Vishay 1181
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AUD 3.0774
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7.8 A- 100 V41 mOhmsP - Channel20 V - 55 C+ 150 C5.2 WSmd/SmtSO - 8Reel    Enhancement  
IPTG020N13NM6ATMA1


MOSFETs N
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Infineon 1177
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AUD 4.991
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297 A135 V2 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WSMD/SMTHSOG - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V159 nCEnhancement  
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