MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDPC5018SG


Fairchild Semiconductor MOSFET PT8 N & PT8 N
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ON Semiconductor 1192
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AUD 0.5953
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56 A , 109 A30 v , 30 V7 mOhms , 2.4 mOhmsN - Channel 1 v , 1 V- 55 C+ 150 C23 w , 29 WSmd/SmtPowerclip56 - 8ReelSi2 Channel+/- 20 v , +/- 12 V17 nC , 62 nCEnhancement Powertrench Power Clip
DMN24H11DS-7


MOSFET MOSFET BVDSS: 101V-250V
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Diodes Incorporated 1191
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AUD 0.2884
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270 mA240 V11 OhmsN - Channel 1 V- 55 C+ 150 C1.2 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V3.7 nCEnhancement  
BSS192P H6327


Infineon Technologies MOSFET P-Ch -250V -190mA SOT-89-3
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Infineon 1191
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AUD 0.2939
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- 190 mA- 250 V12 OhmsP - Channel - 1.5 V- 55 C+ 150 C1 WSmd/SmtPG - SOT - 89 - 3Reel-1 Channel+/- 20 V- 4.9 nCEnhancement  
IPP120N08S403AKSA1


Infineon Technologies MOSFET N-CHANNEL 7580V
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Infineon 1191
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AUD 4.6134
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120 A80 V2.1 mOhmsN - Channel 2 V- 55 C+ 175 C278 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V167 nCEnhancementAec - Q101 
BUK6Y19-30PX


MOSFET BUK6Y19-30PX
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Nexperia 1190
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AUD 0.5681
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           Cut Tape       
NVMFWS9D6P04M8LT1G


MOSFETs MOSFET - Power, Single P-Channel
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ON Semiconductor 1189
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AUD 0.99
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77 A40 V9.5 mOhmsP - Channel 2.4 V- 55 C+ 175 C75 WSMD/SMTSO - 8FLReel , Cut TapeSi1 Channel- 20 V , + 20 V15.04 nCEnhancement  
CJK3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mO @ 5.8A,10V SOT-23-3L RoHS
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Changjing Electronics Technology 1188
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AUD 0.0621
Multiples of: 5

           Tape And Reel       
FDC6301N-VB


20V 4.8A N Channel SOT23-6 MOSFETs ROHS
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VBsemi Elec 1188
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AUD 0.1965
Multiples of: 5

                   
DMTH3004LK3-13


MOSFET N Trench 30V 21A 3V @ 250uA 4 mΩ @ 20A,10V TO-252 RoHS
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Diodes Incorporated 1188
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AUD 0.49
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BSC097N06NS


Infineon Technologies MOSFET N-Ch 60V 46A TDSON-8
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Infineon 1042
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AUD 0.7284
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46 A60 V8 mOhmsN - Channel 2.1 V- 55 C+ 150 C36 WSmd/SmtTDSON - 8Reel-1 Channel20 V15 nCEnhancement Optimos
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