MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
S-LBSS84LT1G


50V 130mA 1.8mO@10V,100mA 225mW P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Leshan 3880
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AUD 0.0399
Multiples of: 20

                   
YJT300G10AQ


TOLL MOSFETs ROHS
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Yangjie 1242
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AUD 6.1395
Multiples of: 1

                   
AO3413


20V 3A 60mΩ@4.5V,3A 1.56W 1.1V@250uA P Channel SOT-23-3L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

MSKSEMI 1241
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AUD 0.0584
Multiples of: 10

                   
BSZ0703LSATMA1


Infineon DIFFERENTIATED MOSFETS
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Infineon 1241
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AUD 0.7844
Multiples of: 1

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AP80P04K


40V 80A 5.8mΩ@20V,80A P Channel TO-252 MOSFETs ROHS
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Quan Li 1241
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AUD 0.8402
Multiples of: 5

                   
RX3G18BBGC16


MOSFETs RX3G18BBG is a power MOSFET with low on-resistance and High power package, suitable for switching.
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ROHM 1241
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AUD 6.7806
Multiples of: 1

270 A40 V2 mOhmsN - Channel 2.5 V- 55 C+ 150 C192 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V210 nCEnhancement  
BUK9Y4R4-40E,115


MOSFET N-channel 40 V 4.4 mo FET
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Nexperia 1240
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AUD 0.7175
Multiples of: 1

100 A40 V3.7 mOhmsN - Channel10 V1.7 V- 55 C+ 175 C147 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V26.8 nC   
FCPF190N60


MOSFET SuperFET2, 190mohm
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ON Semiconductor 1240
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AUD 3.4642
Multiples of: 1

20.2 A650 V199 mOhmsN - Channel  - 55 C+ 150 C39 WThrough HoleTO - 220FTubeSi1 Channel    Superfet Ii
SP3012CNJ


30V 1 N-Channel + 1 P-Channel PDFN-8L(3x3) MOSFETs ROHS
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Siliup 1100
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AUD 0.1046
Multiples of: 5

                   
SI2302HDS-T1-GE3


MOSFETs N-CHANNEL 20-V (D-S) MOSFET
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Vishay 274
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AUD 0.0936
Multiples of: 1

                   
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