MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP15N10K


100V 14.6A 85mΩ@10V,5A 30W N Channel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 3666
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AUD 0.1904
Multiples of: 5

                   
SP8K32HZGTB


MOSFETs AECQ
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ROHM 1250
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AUD 1.0707
Multiples of: 1

                   
NCEP1580


150V 80A 10.4mO@10V,40A 210W N Channel TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 1250
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AUD 1.8298
Multiples of: 1

                   
IXTK210P10T


MOSFET TrenchP Power MOSFETs
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IXYS 1250
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AUD 39.5343
Multiples of: 1

210 A100 V7.5 mOhmsp - channel 4.5 V- 55 C+ 150 C1.04 kWthrough holeTO - 264 - 3Tubesi 15 V740 nCenhancement trenchp
IPD350N06L G


MOSFET OptiMOS PWR TRANST 60V 29A
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Infineon 1249
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AUD 0.399
Multiples of: 1

29 A60 V35 mOhmsN - Channel 1.2 V- 55 C+ 175 C68 WSmd/SmtTO - 252ReelSi1 Channel10 V10 nCEnhancement Optimos
AUIRFSL8407


MOSFET Auto 40V N-Ch FET 1.4mOhm 195A
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Infineon 1249
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AUD 8.6987
Multiples of: 1

195 A40 V1.8 mOhmsN - Channel20 V2 V To 4 V- 55 C+ 175 C230 WThrough HoleI2PAK - 3TubeSi1 Channel20 V150 nCEnhancementAec - Q101Coolirfet
RS60N30D


60V 30A 35mΩ@10V,20A 45W null TO-252 MOSFETs ROHS
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REASUNOS 1246
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AUD 0.1054
Multiples of: 5

                   
SK03N06L


60V 2.2A 72.8mΩ@10V,2A 2W 2V@250uA null SOT-89 MOSFETs ROHS
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Shikues 1246
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AUD 0.1243
Multiples of: 5

                   
KNY3303C


DFN-8(5x6) MOSFETs ROHS
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KIA 1246
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AUD 0.2081
Multiples of: 5

                   
SSM3J56ACT,L3F


20V 1.4A 390mO@4.5V,800mA 500mW P Channel SOT-883-3 MOSFETs ROHS
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Toshiba 1231
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AUD 0.1787
Multiples of: 5

- 1.4 A- 20 V4 OhmsP - Channel - 1 V- 55 C+ 150 C500 mWSmd/SmtCST - 3ReelSi1 Channel+/- 8 V1.6 nCEnhancement  
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