MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSL6107


60V 2.3A 140mΩ@10V,2A 1.5W P Channel SOT-223-4 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HUASHUO 1358
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AUD 0.1725
Multiples of: 5

                   
AO3160E


Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3
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Alpha & Omega 1265
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AUD 0.1316
Multiples of: 5

                   
IRLR8726TRLPBF-HXY


30V 100A 5.5mΩ@10V,30A 2.5V null TO252-2L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 1265
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AUD 0.1723
Multiples of: 5

                   
HSCC8233


MOSFET DoubleNChannelCommon Drain -20V 11A 1V @ 250uA 7.2mΩ @ 5.5A,4.5V DFN2*3 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HUASHUO 1265
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AUD 0.2484
Multiples of: 5

                   
IRL530PBF-BE3


N-Channel 100V 15A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 1265
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AUD 0.7854
Multiples of: 1

15 A100 V160 mOhmsN - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V28 nCEnhancement  
IXFH340N075T2


N-Channel 75 V 340A (Tc) 935W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 1263
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AUD 12.806
Multiples of: 1

340 A75 V3.2 mOhmsn - channel 4 V- 55 C+ 175 C935 Wthrough holeTO - 247 - 3Tubesi1 channel20 V300 nCenhancement hiperfet
BSC100N03MS G


Infineon Technologies MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
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Infineon 1262
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AUD 0.4384
Multiples of: 1

12 A30 V10 mOhmsN - Channel16 V1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V23 nCEnhancement Optimos
NCE30P28Q


MOSFET DFN3.3X3.3-8L RoHS
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NCE Power 1231
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AUD 0.3802
Multiples of: 5

                   
HYG028N10NS1B6


100V 230A 2.4mΩ@10V,50A 300W 3V@250uA 242pF@25V N Channel 10.32nF@25V 176nC@10V -55℃~+175℃@(Tj) TO-263-6 MOSFETs ROHS
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HuaYi 1213
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AUD 1.3438
Multiples of: 1

                   
WSD3042DN56


MOSFET N Channel 30V 40A(Tc) 1.3V @ 250uA 10.8mO @ 10A,10V DFN5x6-8 RoHS
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Winsok 0
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AUD 0.3977
Multiples of: 1

                   
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