MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R8008ANJFRGTL


MOSFET Nch 800V Vdss 8A ID TO-263(D2PAK); LPTS
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ROHM 1268
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AUD 3.9567
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8 A800 V1.03 OhmsN - Channel 5 V- 55 C+ 150 C195 WSMD/SMTTO - 263S - 3Reel , Cut TapeSi1 Channel- 30 V , 30 V38 nCEnhancementAEC - Q101 
DMN3011LSSQ-13


MOSFETs MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K
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Diodes Incorporated 1267
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AUD 0.2873
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11 A30 V10 mOhmsN - Channel 2.25 V- 55 C+ 150 C1.7 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V19.7 nCEnhancement  
NVMFD5C466NT1G


MOSFET 40V 8.1 MOHM T8 SO-8FL DUAL DFN-8
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ON Semiconductor 1267
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AUD 1.54
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49 A40 V8.1 mOhmsN - Channel 2.5 V- 55 C+ 175 C38 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V11 nCEnhancementAec - Q101 
NTTFS3D7N06HLTWG


MOSFET T8 60V DFN POWER CLIP 3X3
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ON Semiconductor 1267
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AUD 1.4809
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103 A60 V3.9 mOhmsN - Channel 2 V- 55 C+ 150 C83 WSMD/SMTPQFN - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V32.7 nCEnhancement PowerTrench
Hot IRFIZ48GPBF


MOSFET RECOMMENDED ALT 844-IRFIZ48GPBF
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Vishay 1267
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AUD 2.0478
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         Through HoleTO - 220 - 3TubeSi      
STB7ANM60N


STMicroelectronics MOSFET N-CH 600V 5A 0.84Ohm MDmesh II
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STMicroelectronics 1266
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AUD 1.1246
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5 A600 V900 mOhmsn - channel25 V3 V- 55 C+ 150 C45 Wsmd/smtDPAK - 3Reelsi1 channel25 V14 nC aec - q101mdmesh
AUIRFR5410


Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
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Infineon 1266
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AUD 1.3058
Multiples of: 1

   P Channel               
FDS6912A(UMW)


SOP-8 MOSFETs ROHS
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Youtai 1265
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AUD 0.1277
Multiples of: 5

                   
STF10NM60N


MOSFET N-channel 600 V Mdmesh 8A
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STMicroelectronics 1258
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AUD 1.3659
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10 A650 V550 mOhmsN - Channel 4 V- 55 C+ 150 C70 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel25 V19 nCEnhancement Mdmesh
SQJ431AEP-T1_BE3


MOSFETs PowerPAK SO-8L
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Vishay 1234
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AUD 1.1706
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9.4 A200 V305 mOhmsP - Channel 3.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8L - 5 Si1 Channel- 20 V , + 20 V85 nCEnhancement  
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