MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MDT70N03


30V 70A 8m@4.5V,20A 60W 1.1V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Minos 1309
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AUD 0.0594
Multiples of: 10

                   
FDMS7692A


Fairchild Semiconductor MOSFET PT7 3020V Nch PowerTrench
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ON Semiconductor 1304
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AUD 0.6978
Multiples of: 1

13.5 A30 V10 OhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V15 nCEnhancement Powertrench
IRFP150PBF


N-Channel 100 V 41A (Tc) 230W (Tc) Through Hole TO-247AC
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Vishay 1303
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AUD 2.2567
Multiples of: 1

41 A100 V55 mOhmsN - Channel 2 V- 55 C+ 175 C230 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V140 nCEnhancement  
DMN3018SFG-7


MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
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Diodes Incorporated 1302
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AUD 0.2972
Multiples of: 1

8.5 A30 V21 mOhmsN - Channel25 V1.7 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel25 V13.2 nCEnhancement  
PSMN3R2-40YLBX


MOSFETs SOT669 N CHAN 40V
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Nexperia 1301
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AUD 0.5943
Multiples of: 1

120 A40 V3.3 mOhmsN - Channel 2.05 V- 55 C+ 175 C115 WSMD/SMTPOWER - SO8 - 4 Si1 Channel- 20 V , + 20 V42 nCEnhancement  
SH8JE5TB1


MOSFETs SH8JE5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 1301
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AUD 1.5006
Multiples of: 1

           Reel , Cut TapeSi      
BUK7Y28-75B,115


MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Nexperia 1300
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AUD 0.5648
Multiples of: 1

35.5 A75 V23 mOhmsN - Channel     Smd/SmtLFPAK - 4ReelSi1 Channel     
SQD25N15-52_GE3


MOSFET 150V 25A 136W AEC-Q101 Qualified
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Vishay 1300
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AUD 1.5632
Multiples of: 1

25 A150 V38 mOhmsN - Channel 2.5 V- 55 C+ 175 C107 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V51 nCEnhancementAec - Q101Trenchfet
2300


SOT-23 MOSFETs ROHS
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High Diode 1299
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AUD 0.0312
Multiples of: 20

                   
2N7002K-AU_R1_000A2


MOSFET 60V N-Channel Enhancement Mode MOSFET - ESD Protected
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Panjit 1299
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AUD 0.0347
Multiples of: 20

                   
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