MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HP8K24TB


MOSFET 30V NCH+NCH MIDDLE POWER
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ROHM 1308
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.9851

Multiples of: 1

27 A , 80 A30 V8.8 mOhms , 3 mOhmsN - Channel 1.3 V- 55 C+ 150 C22 w , 31 WSmd/SmtHSOP - 8Cut TapeSi2 Channel20 V10 nC , 36 nCEnhancement  
NTB5D0N15MC


MOSFET PTNG 150V N-FET D2PAK
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ON Semiconductor 1308
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 5.2209

Multiples of: 1

139 A150 V5 mOhmsN - Channel 4.5 V- 55 C+ 175 C214 WSMD/SMTSC - 70 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V75 nCEnhancement  
IPB081N06L3GATMA1


MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
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Infineon 1307
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.9999

Multiples of: 1

50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V29 nCEnhancement Optimos
FQA40N25


Fairchild Semiconductor MOSFET 250V N-Channel QFET
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ON Semiconductor 1307
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between Wed. 12 Aug to Mon. 17 Aug
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AUD 2.5561

Multiples of: 1

40 A250 V70 mOhmsn - channel  - 55 C+ 150 C280 Wthrough holeTO - 3P - 3Tube  30 V enhancement  
BSC070N10NS5


MOSFET TRENCH >=100V
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Infineon 1306
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between Wed. 12 Aug to Mon. 17 Aug
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AUD 0.6182

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DMP1012USSQ-13


MOSFETs MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K
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Diodes Incorporated 1305
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.2479

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           Reel , Cut TapeSi      
STC4614


40V 10A 2.8W P Channel SOP-8 MOSFETs ROHS
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STANSON Tech 1304
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between Wed. 12 Aug to Mon. 17 Aug
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AUD 0.0991

Multiples of: 5

                   
IPB012N04NF2SATMA1


MOSFETs N
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Infineon 1291
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 1.7567

Multiples of: 1

197 A40 V1.25 mOhmsN - Channel 2.1 V- 55 C+ 175 C250 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V159 nCEnhancement StrongIRFET
PSMN7R5-60YLX


MOSFET PSMN7R5-60YL/LFPAK/REEL 7" Q1/
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Nexperia 166
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.5664

Multiples of: 1

86 A60 V6 mOhmsN - Channel 1.4 V- 55 C+ 175 C147 WSmd/SmtLFPAK56 - 5Cut TapeSi1 Channel20 V60.6 nCEnhancement  
CJAC110SN10A


100V 110A 3.4mΩ@10V,20A 125W 1.8V@250uA 35pF@50V N Channel 3.736nF@50V 93nC@10V -55℃~+150℃@(Tj) PDFNWB5x6-8L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjing Electronics Technology 0
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AUD 2.0478

Multiples of: 1

                   
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