MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBA6115


60V 35A 25mΩ@10V,18A 52.1W 2.5V@250uA 141pF@15V P Channel 3.635nF@15V 25nC@4.5V -55℃~+150℃@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 1339
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AUD 0.4656
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SIRA20DP-T1-RE3


MOSFET N-Ch (D-S) 25V Vds 61nC Qg typ.
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Vishay 1313
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AUD 1.4842
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          POWERPAK - SO - 8Cut TapeSi      
STU65N3LLH5


MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V
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STMicroelectronics 1312
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AUD 0.7404
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65 A30 V9.7 mOhmsn - channel 1.8 V- 55 C+ 175 C50 Wthrough holeIPAK - 3Tubesi1 channel 8 nC   
IXTA06N120P


MOSFET 0.6 Amps 1200V 32 Rds
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IXYS 1312
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AUD 4.2522
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600 mA1.2 kV34 Ohmsn - channel 2 V- 55 C+ 150 C42 Wsmd/smtTO - 263AA - 3Tubesi1 channel10 V13.3 nCenhancement  
STD2HNK60Z


MOSFET N Ch 600V Zener SuprMESH 4.4 A
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STMicroelectronics 1311
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AUD 0.5036
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2 A600 V4.8 Ohmsn - channel 3 V- 55 C+ 150 C45 Wsmd/smtDPAKReelsi1 channel10 V11 nCenhancement supermesh
MMBT7002KDW


MOSFETs MOSFET, SOT-363, 60V, 0.3A, 150C, N
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Diotec 1311
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AUD 0.0702
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300 mA60 V3 OhmsN - Channel 1.1 V- 55 C+ 150 C350 mWSMD/SMTSOT363 - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V440 pCEnhancement  
NVTFWS1D3N04XMTAG


MOSFETs 40V T10M IN U8FL GEN 2 PACKAGE
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ON Semiconductor 1311
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AUD 1.2194
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178 A40 V1.43 mOhmsN - Channel 3.5 V- 55 C+ 175 C83 WSMD/SMTWDFNW - 8Reel , Cut TapeSi1 Channel20 V36 nCEnhancement  
SPD04N80C3ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 1310
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AUD 0.9719
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4 A800 V1.1 OhmsN - Channel 2.1 V- 55 C+ 150 C63 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V31 nCEnhancement Coolmos
TN0110N3-G-P002


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 1310
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AUD 1.8194
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350 mA100 V4.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3ReelSi1 Channel20 V Enhancement  
BSO150N03MDGXUMA1


Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
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Infineon 1293
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AUD 0.573
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