MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFS5C670NLTAG


MOSFET T6 60V NCH LL IN U8FL
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ON Semiconductor 1455
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AUD 1.8584
Multiples of: 1500

70 A60 V9.1 mOhmsn - channel 1.2 V- 55 C+ 175 C63 Wsmd/smtWDFN - 8Reelsi1 channel+/- 20 V20 nCenhancement  
IPP037N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
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Infineon 1455
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AUD 1.9849
Multiples of: 500

            Optimos 3      
NVMFS5C404NWFHT1G


MOSFETs T6-40V N 0.7 MOHMS SL
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ON Semiconductor 1455
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AUD 2.0429
Multiples of: 1

378 A40 V700 uOhmsN - Channel 4 V- 55 C+ 175 C200 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel20 V128 nCEnhancement  
NVMFS5113PLT1G


MOSFET SINGLE P-CHANNEL S08FL 60V 69A 1
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ON Semiconductor 1455
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AUD 2.1737
Multiples of: 1500

64 A60 V14 mOhmsP - Channel 1.5 V- 55 C+ 150 C150 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel- 10 V83 nCEnhancementAec - Q101 
STP140NF75


Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; TO220-3
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STMicroelectronics 1455
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AUD 2.2209
Multiples of: 50

                   
NVMFS5C404NET1G


MOSFETs T6 40V HEFET
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ON Semiconductor 1455
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AUD 2.2657
Multiples of: 1

378 A40 V700 uOhmsN - Channel 4 V- 55 C+ 175 C200 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V128 nCEnhancement  
STFI10N62K3


N-Channel 620 V 8.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
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STMicroelectronics 1455
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AUD 2.2985
Multiples of: 1

8.4 A620 V680 mOhmsn - channel 3.75 V- 55 C+ 150 C30 Wthrough holeI2PAKFP - 3Tubesi1 channel30 V42 nCenhancement  
IPI045N10N3GXKSA1


Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
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Infineon 1455
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AUD 2.3851
Multiples of: 500

            Optimos 3      
TN2425N8-G


Transistor: N-MOSFET; unipolar; 250V; 1.5A; 1.6W; SOT89-3
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Microchip 1455
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AUD 2.4584
Multiples of: 250

                   
NTTFS6H850NTAG


MOSFET TRENCH 8 80V NFET
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ON Semiconductor 1455
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AUD 2.7627
Multiples of: 1

68 A80 V9.5 mOhmsN - Channel 2 V- 55 C+ 175 C107 WSmd/SmtWDFN - 8Cut TapeSi1 Channel20 V19 nCEnhancement  
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