MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS3602AS


MOSFET DUAL N-Channel Power Trench MOSFET
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ON Semiconductor 1455
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AUD 1.3582
Multiples of: 1

15 A , 26 A25 v , 25 V4.4 mOhms , 1.7 mOhmsN - Channel 1 v , 1 V- 55 C+ 150 C2.2 w , 2.5 WSmd/SmtPOWER56 - 8ReelSi2 Channel+/- 20 v , +/- 20 V27 nC , 64 nCEnhancement Power Stage Powertrench
STFI11N65M2


STMicroelectronics MOSFET
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STMicroelectronics 1455
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AUD 1.3709
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7 A650 V670 mOhmsn - channel25 V3 V- 55 C+ 150 C25 Wthrough holeI2PAKFP - 3Tubesi1 channel25 V12.5 nC  mdmesh ii plus
IRFI540GPBF


N-Channel 100 V 17A (Tc) 48W (Tc) Through Hole TO-220-3
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Vishay 1455
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AUD 1.4209
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         Through HoleTO - 220 - 3TubeSi      
TN2435N8-G


Transistor: N-MOSFET; unipolar; 350V; 1A; 1.6W; SOT89-3
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Microchip 1455
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AUD 1.459
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365 mA350 V6 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Enhancement  
NVMFD5C466NLT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor 1455
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AUD 1.481
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52 A40 V6.2 mOhms , 6.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C40 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V16 nC , 16 nCEnhancementAec - Q101 
STB120N4LF6


MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE
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STMicroelectronics 1455
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AUD 1.691
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80 A40 V4 mOhmsn - channel 2.5 V- 55 C+ 150 C110 Wsmd/smtD2PAKReelsi1 channel20 V80 nC aec - q101stripfet
NVMFWD010N10MCLT1G


MOSFETs PTNG 100V LL SO8FL DUAL
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ON Semiconductor 1455
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AUD 1.6971
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61 A100 V10.4 mOhmsN - Channel 3 V- 55 C+ 175 C84 WSMD/SMTDFN - 8Reel , Cut TapeSi2 Channel20 V26 nCEnhancement  
NVMFS4C301NET1G


MOSFETs NFET SO8FL 30V 305A 0.9MO
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ON Semiconductor 1455
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AUD 1.7914
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           Reel , Cut Tape       
IPP320N20N3GXKSA1


Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
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Infineon 1455
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AUD 1.8088
Multiples of: 500

            Optimos 3      
NVMFS4C301NWFET1G


MOSFETs NFET SO8FL 30V 305A 0.9MO
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ON Semiconductor 1455
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AUD 1.8543
Multiples of: 1

           Reel , Cut Tape       
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