MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM70N380CI C0G


Trans MOSFET N-CH 700V 11A 3-Pin(3+Tab) ITO-220 Tube
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Taiwan Semiconductor 1598
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AUD 2.8403
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11 A700 V380 mOhmsN - Channel 2 V- 55 C+ 150 C33 WThrough HoleI TO - 220 - 3TubeSi1 Channel30 V18.8 nCEnhancement  
IPT012N08NF2SATMA1


MOSFETs N
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Infineon 1598
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AUD 3.5955
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351 A80 V1.23 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WSMD/SMTHSOF - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V170 nCEnhancement  
PJX8603_R1_00001


MOSFETs Complementary Enhancement Mode MOSFETESD Protected
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Panjit 1597
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AUD 0.1602
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CMS25N03V8A-HF


MOSFETs MOSFET N-CH 30VDS 20VGS 25A
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Comchip 1597
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AUD 0.2676
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25 A20 V , 20 V18 mOhmsN - Channel 2.5 V- 50 C+ 150 C21 WSMD/SMTPDFN3X3 - 8LReel , Cut TapeSi1 Channel- 20 V , + 20 V4.1 nCEnhancement  
SQ4153EY-T1_BE3


MOSFET N-CHANNEL 12V
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Vishay 1597
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AUD 1.25
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25 A12 V5.1 mOhmsP - Channel 900 mV- 55 C+ 175 C7.1 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 8 V , + 8 V101 nCEnhancement TrenchFET
NX3020NAKW-QX


MOSFETs NX3020NAKW-Q/SOT323/SC-70
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Nexperia 1596
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AUD 0.0788
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220 mA30 V3 OhmsN - Channel 1.5 V- 55 C+ 175 C310 mWSMD/SMTSC - 70 - 3Reel , Cut TapeSi1 Channel20 V210 pCEnhancement  
DMTH10H032LPSWQ-13


MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K
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Diodes Incorporated 1596
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AUD 0.4728
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           Reel , Cut TapeSi      
STFH10N60M2


MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
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STMicroelectronics 1596
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AUD 1.0918
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7.5 A600 V550 mOhmsN - Channel 2 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3TubeSi1 Channel+/- 25 V13.5 nCEnhancement Mdmesh
IPT020N10N3


Infineon Technologies MOSFET
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Infineon 1596
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AUD 3.5791
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300 A100 V2 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtHSOF - 8ReelSi1 Channel10 V156 nCEnhancement Optimos
IRFB4620PBF


Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
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Infineon 1353
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AUD 1.4606
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25 A200 V72.5 mOhmsN - Channel  - 55 C+ 175 C144 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V25 nCEnhancement  
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