MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LWS6080A23


SOT-223 MOSFETs ROHS
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Lewa Micro 1600
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AUD 0.1112
Multiples of: 5

                   
MOT5N65D


650V 5A 54W 2.2@10V,2.5A 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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MOT 1600
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AUD 0.1686
Multiples of: 5

                   
AGM12N10A


100V 55A 9.3m@10V,20A 96W 1.8V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS
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AGM-Semi 1600
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AUD 0.3188
Multiples of: 5

                   
FDD86252


MOSFET 150 N-CH PwrTrench MOSFET
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ON Semiconductor 1600
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AUD 1.0168
Multiples of: 1

5 A150 V41 mOhmsN - Channel 3.1 V  3.1 WSmd/SmtDPAKReelSi1 Channel20 V11.3 nC  Powertrench
IRF6775MTRPBF


N-Channel 150 V 4.9A (Ta), 28A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
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Infineon 1599
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AUD 1.35
Multiples of: 1

            Hexfet®      
IXFT36N50P


MOSFET 500V 36A
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IXYS 1599
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AUD 12.8388
Multiples of: 1

36 A500 V170 mOhmsN - Channel 5 V- 55 C+ 150 C540 WSMD/SMTD3PAK - 3 (TO - 268 - 3)TubeSi1 Channel- 30 V , 30 V93 nCEnhancement HiPerFET
NVMFS6H852NLWFT1G


MOSFET T8 80V LL SO8FL
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ON Semiconductor 1598
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AUD 0.6403
Multiples of: 1

42 A80 V13.1 mOhmsN - Channel 2 V- 55 C+ 175 C54 WSMD/SMTDFN - 5Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V17 nCEnhancementAEC - Q101 
RD3U041AAFRATL


N-Channel 250V 4A (Tc) 29W (Tc) Surface Mount TO-252
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ROHM 1598
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AUD 1.0688
Multiples of: 1

4 A250 V1.3 OhmsN - Channel 5.5 V- 55 C+ 150 C29 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V8.5 nCEnhancement  
HSBA3115


MOSFET P Channel -30V 59A 2.5V @ 250uA 9.8mΩ @ 10A,10V PRPAK5*6 RoHS
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HUASHUO 1547
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AUD 0.2333
Multiples of: 5

                   
RD3L140SPTL1


MOSFET Pch -60V -14A TO-252(DPAK)
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ROHM 1083
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AUD 0.7238
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14 A60 V60 mOhmsP - Channel 3 V- 55 C+ 150 C20 WSmd/SmtDPAK - 3Cut TapeSi1 Channel- 10 V27 nCEnhancement  
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