MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK11P65W,RQ


N-Channel 650 V 11.1A (Ta) 100W (Tc) Surface Mount DPAK
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Toshiba 1638
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AUD 1.331
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11.1 A650 V350 mOhmsN - Channel 2.5 V- 55 C+ 150 C100 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V25 nCEnhancement  
IRF740ALPBF


N-Channel 400 V 10A (Tc) 3.1W (Ta), 125W (Tc) Through Hole I2PAK
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Vishay 1638
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AUD 2.2164
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   n - channel  - 55 C+ 150 C through holeTO - 262Tubesi      
SQJ479EP-T1_NE3


MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay 1637
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AUD 0.7569
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IPD038N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
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Infineon 1637
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AUD 1.2843
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            Optimos 3      
SSM6N57NU,LF


Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface Mount 6-µDFN (2x2)
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Toshiba 1636
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AUD 0.2146
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4 A30 V82 mOhmsN - Channel 0.4 v to 1 V  2 WSmd/SmtUDFN - 6ReelSi2 Channel12 V3.2 nC   
BSS84LT7G


MOSFET PFET SOT23 50V 130MA 10.0
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ON Semiconductor 1635
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AUD 0.0706
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           Cut Tape       
NVMFD5C680NLET1G


MOSFETs T6 60V LL S08FL DS
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ON Semiconductor 1635
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AUD 0.5579
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20 A60 V28 mOhmsN - Channel 2.2 V- 55 C+ 175 C24 WSMD/SMTDFN - 8Reel , Cut TapeSi2 Channel20 V5 nCEnhancement  
IXTA36N30P


MOSFET MOSFET N-CH 300V 36A
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IXYS 1635
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AUD 4.6955
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36 A300 V110 mOhmsN - Channel  - 55 C+ 150 C300 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V Enhancement  
NVMFSC1D6N06CL


N-Channel Power MOSFET DUAL COOL 60V 224A 1.5mOhm 8-Pin DFN Surface Mount T/R
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ON Semiconductor 1539
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AUD 5.3851
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224 A60 V1.5 mOhmsN - Channel 2 V- 55 C+ 150 C166 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V41 nCEnhancementAEC - Q101 
NCE2030K


MOSFET N Trench 20V 30A 1.2V @ 250uA 13 mΩ @ 20A,4.5V TO-252-2 (DPAK) RoHS
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NCE Power 1538
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AUD 0.1707
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