MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC5661N


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 1649
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AUD 0.1809
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YJS4438A


SOP-8 MOSFETs ROHS
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Yangjie 1649
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AUD 0.1821
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SI1443EDH-T1-GE3


MOSFET -30V 54mOhm@10V 4A P-Ch G-III
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Vishay 1649
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AUD 0.2345
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4 A30 V43 mOhmsP - Channel 1.5 V- 55 C+ 150 C2.8 WSmd/SmtSOT - 363 (SC - 70 - 6)ReelSi1 Channel12 V28 nCEnhancement Trenchfet
STP16NF06


mosfet n trench 60v 16a 4v @ 250ua 100 m @ 8a,10v to-220 (to-220-3) rohs
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STMicroelectronics 1649
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AUD 0.569
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TN2501N8-G


Transistor: N-MOSFET; unipolar; 18V; 0.25A; 1.6W; SOT89-3
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Microchip 1649
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AUD 1.4123
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400 mA18 V2.5 OhmsN - Channel 300 mV- 55 C+ 150 C1.6 WSMD/SMTSOT - 89 - 3Reel , Cut TapeSi1 Channel- 15 V , 15 V Enhancement  
R6511KND3TL1


MOSFETs Transistor MOSFET, Nch 650V 11A 3rd Gen, Fast Switch
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ROHM 1649
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AUD 1.5187
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11 A650 V400 mOhmsN - Channel 5 V- 55 C+ 150 C124 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V22 nCEnhancement  
FDD6688


Fairchild Semiconductor MOSFET 30V N-Ch PowerTrench
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ON Semiconductor 1648
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AUD 1.9521
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84 A30 V4 mOhmsn - channel20 V - 55 C+ 175 C83 Wsmd/smtDPAK - 3Reelsi1 channel20 V enhancement powertrench
IRF9540SPBF


P-Channel 100 V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 1640
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AUD 1.609
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19 A100 V200 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V61 nCEnhancement  
RF4C050APTR


MOSFET Pch -20V -10A Middle Power MOSFET
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ROHM 1638
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AUD 0.3825
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10 A20 V65 mOhmsP - Channel 300 mV- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel- 8 V55 nCEnhancement  
IPT60R080G7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 1624
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AUD 4.5642
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29 A600 V69 mOhmsN - Channel 3 V- 55 C+ 150 C167 WSmd/SmtHSOF - 8Cut TapeSi1 Channel30 V42 nCEnhancement Coolmos
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