MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF2805PBF


Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 30070
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AUD 1.2815
Multiples of: 1000

            Hexfet®      
IPG20N06S4-15


MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
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Infineon 1661
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AUD 1.597
Multiples of: 1

20 A60 V15.5 mOhmsn - channel   + 175 C50 Wsmd/smtTDSON - 8Reelsi2 channel20 V   optimos
IRFZ44PBF-BE3


N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB
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Vishay 1658
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AUD 1.0522
Multiples of: 1

          TO - 220 - 3TubeMosfet (Metal Oxide)      
IXFH30N60P


Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247
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IXYS 1658
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AUD 11.1149
Multiples of: 1

30 A600 V240 mOhmsN - Channel 2.5 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V82 nCEnhancement HiPerFET
NTTFS4C05NTAG


ON Semiconductor MOSFET
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ON Semiconductor 1657
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AUD 0.3376
Multiples of: 1

75 A30 V3.6 mOhmsN - Channel     Smd/SmtWDFN - 8ReelSi      
RSD080N06TL


ROHM Semiconductor MOSFET 4V Drive Nch MOSFET
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ROHM 1657
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AUD 0.9244
Multiples of: 1

8 A60 V80 mOhmsN - Channel     Smd/SmtTO - 252 - 3Tape And ReelSi   Enhancement  
SIS892ADN-T1-GE3


MOSFET 100V 33mOhm@10V 28A N-Ch MV T-FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 1656
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AUD 0.789
Multiples of: 1

28 A100 V27 mOhmsN - Channel 1.5 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel20 V19.5 nCEnhancement Trenchfet, Powerpak
FDS9400A


30V 3.4A 130mO@10V,1A 2.5W P Channel SOIC-8 MOSFETs ROHS
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ON Semiconductor 1656
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AUD 0.847
Multiples of: 1

3.4 A30 V130 mOhmsp - channel  - 55 C+ 175 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel25 V enhancement powertrench
PSMN013-30YLC.115


Transistor: N-MOSFET; unipolar; 30V; 32A; 26W; SOT669
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Nexperia 1632
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AUD 0.677
Multiples of: 1

                   
DMG6602SVTX-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 829
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AUD 0.2167
Multiples of: 1

3.4 A , 2.8 A30 V60 mOhms , 95 mOhmsN - Channel, P - Channel 500 mV , 1.8 V- 55 C+ 150 C1.12 WSMD/SMTTSOT - 26 - 6Reel , Cut TapeSi2 Channel- 20 V , 20 V13 nC , 9 nCEnhancement  
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