MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA60DDP-T1-UE3


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 1712
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AUD 0.7749
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241 A30 V900 uOhmsN - Channel 2.2 V- 55 C+ 150 C78 WSMD/SMTSO - 8 Si1 Channel- 16 V , + 20 V84 nCEnhancement  
PJA138K-AU_R1_000A1


MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
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Panjit 1711
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AUD 0.0549
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PSMN1R0-30YLEX


MOSFETs PSMN1R0-30YLE/SOT669/LFPAK
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Nexperia 1711
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AUD 1.5581
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275 A30 V1.1 mOhmsN - Channel 2.2 V- 55 C+ 175 C224 WSMD/SMTSOT - 669 - 5Reel , Cut TapeSi1 Channel- 20 V , 20 V54 nCEnhancement  
IRF9Z30PBF-BE3


MOSFET 60V P-CH HEXFET MOSFET
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Vishay 1709
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AUD 2.2115
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18 A50 V140 mOhmsP - Channel 4 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
RSJ550N10TL


MOSFET 4V Drive Nch MOSFET
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ROHM 1709
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AUD 3.7292
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55 A100 V16.8 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi      
LGE03N06BF


SOT-23 MOSFETs ROHS
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LGE 1707
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AUD 0.0341
Multiples of: 20

                   
APM2301CAC-TRG


MOSFET P Trench 20V 2.8A 1V @ 250uA 70 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Anpec 1702
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AUD 0.1128
Multiples of: 5

                   
IXTP08N100D2


MOSFET N-CH MOSFETS 1000V 800MA
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IXYS 1697
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AUD 2.4627
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800 mA1 kV21 Ohmsn - channel  - 55 C+ 150 C60 Wthrough holeTO - 220AB - 3Tubesi1 channel20 V14.6 nCdepletion  
JSM100N03D


TO-252 MOSFETs ROHS
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JSMSEMI 848
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AUD 0.1658
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FDS4465


Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8
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ON Semiconductor 739
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AUD 0.9894
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