MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFU3607PBF


Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
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Infineon 2910
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AUD 0.9131
Multiples of: 3000

80 A75 V7.34 mOhmsN - Channel    140 WThrough HoleIPAKTubeSi1 Channel20 V56 nC   
2SJ168(TE85L,F)


Transistor: P-MOSFET; unipolar; -60V; -0.2A; 200mW; SC59
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Toshiba 1838
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AUD 0.3188
Multiples of: 5

                   
PJS6839_S1_00001


MOSFET /SG9/TRR/7"/HF/3K/SOT23-6L/MOS/SOT/NFET-60TLMP/NF60TL-QI04/PJ///
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Panjit 1837
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AUD 0.1051
Multiples of: 1

300 mA60 V4 OhmsP - Channel 2.5 V- 55 C+ 150 C500 mWSMD/SMTSOT - 23 - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V1.1 nCEnhancement  
PSMN2R2-40YSBX


MOSFETs SOT669 N CHAN 40V
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Nexperia 1836
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AUD 0.7881
Multiples of: 1

180 A40 V2.2 mOhmsN - Channel 3.6 V- 55 C+ 175 C166 WSMD/SMTPOWER - SO8 Si1 Channel- 20 V , + 20 V49 nCEnhancement  
BSS138L


Fairchild Semiconductor MOSFET
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ON Semiconductor 1835
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AUD 0.0875
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/Smt Reel    Enhancement  
IPN50R800CEATMA1


Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
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Infineon 1835
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AUD 0.3464
Multiples of: 1

            Coolmos Ce      
IPD60R360P7ATMA1


Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3
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Infineon 1835
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AUD 0.9953
Multiples of: 1

            Coolmos P7      
STB75NF75T4


STMicroelectronics MOSFET N-Ch, 75V-0.0095ohms 80A
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STMicroelectronics 1835
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AUD 1.906
Multiples of: 1

80 A75 V11 mOhmsN - Channel20 V3 V- 55 C+ 175 C300 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V Enhancement Stripfet
SQJ488EP-T1_BE3


MOSFET N-CHANNEL 100VD-S
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Vishay 1834
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AUD 1.0475
Multiples of: 1

           Cut Tape       
SUM110N10-09-E3


MOSFET 100V 110A 375W
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Vishay 62
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AUD 3.6776
Multiples of: 1

110 A100 V9.5 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel10 V110 nCEnhancement Trenchfet
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