MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ASDM100R045NQ-R


100V 90A 60W 3.7mΩ@10V,20A 3V@250uA 13.2pF@40V N Channel 2890pF@40V 23nC@10V -55℃~+150℃@(Tj) PDFN5x6-8 MOSFETs ROHS
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Ascend 1895
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AUD 0.5259
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FDD8451


MOSFET 40V N-Ch PowerTrench MOSFET
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ON Semiconductor 1885
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AUD 1.0281
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28 A40 V30 mOhmsN - Channel  - 55 C+ 150 C30 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
MMFTN620KDW


MOSFETs MOSFET, SOT-363, 60V, 0.35A, 150C, N
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Diotec 1884
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AUD 0.071
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          SOT - 363Reel , Cut Tape      MMFTN620KDW
FDB12N50TM


N-Channel 500 V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 1884
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AUD 1.3542
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11.5 A500 V550 mOhmsN - Channel  - 55 C+ 150 C165 WSmd/SmtD2PAKReelSi1 Channel30 V Enhancement  
DMG1012UWQ-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 1883
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AUD 0.1066
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950 mA25 V450 mOhmsN - Channel 1 V- 55 C+ 150 C460 mWSMD/SMT Reel , Cut TapeSi1 Channel- 6 V , + 6 V1 nCEnhancement  
NTBLS1D7N10MCTXG


MOSFETs MOSFET, Power, Single N-Channel, 100V, TOLL Package
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ON Semiconductor 1883
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AUD 5.7463
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272 A100 V1.8 mOhmsN - Channel 4 V- 55 C+ 175 C295 WSMD/SMTH - PSOF8L - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V115 nCEnhancement  
FH8205


SOT-23-6 MOSFETs ROHS
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Xinfeihong 1881
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AUD 0.0373
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NTR4171PT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1881
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AUD 0.0401
Multiples of: 10

                   
BSS215P-JSM


20V 3A 105mΩ@4.5V P Channel SOT-23-3 MOSFETs ROHS
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JSMSEMI 1881
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AUD 0.0558
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SP9435AP8


SOP-8L MOSFETs ROHS
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Siliup 1881
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AUD 0.0562
Multiples of: 10

                   
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