IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4PC50UPBF


Transistor: IGBT; 600V; 55A; 200W; TO247-3
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Infineon 0
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AUD 16.0629

Multiples of: 1

Single600 V2 V20 V55 A100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 C 
SGF5N150UFTU


Fairchild Semiconductor IGBT Transistors 1500V 5A
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ON Semiconductor 0
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AUD 16.1348

Multiples of: 1

Single1500 V4.7 V+/- 20 V10 A+/- 100 nA62.5 W TO - 3PF - 3TubeSiThrough Hole62.5 W- 55 C+ 150 CSgf5n150
IXYT20N120C3D1HV


IGBT Transistors Disc IGBT XPT-GenX3 TO-268AA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 16.194

Multiples of: 1

Single1.2 kV3.4 V20 V36 A100 nA  TO - 268HV - 2 SiSmd/Smt230 W- 55 C+ 150 C 
IXGX72N60B3H1


IGBT Transistors 72 Amps 600V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 16.1967

Multiples of: 9

 600 V1.5 V20 V75 A100 nA  PLUS 247 - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgx72n60
APT25GP90BG


IGBT Transistors FG, IGBT, 900V, 25A, TO-247, RoHS
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Microchip 0
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AUD 16.1969

Multiples of: 1

      417 W   POWER MOS 7®, PT     
IRG4PSH71UPBF


IGBT Transistors 1200V UltraFast 8-40kHz
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Infineon 0
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AUD 16.28

Multiples of: 1

Single1.2 kV2.7 V+/- 20 V99 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
FGY100T120RWD


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 16.3311

Multiples of: 1

                
IXGT24N170


IGBT Transistors 24 Amps 1200 V 3.3 V Rds
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IXYS 0
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AUD 16.3403

Multiples of: 1

Single1.7 kV2.5 V20 V50 A100 nA  TO - 268 - 3TubeSiSmd/Smt250 W- 55 C+ 150 CIxgt24n170
IXGH28N120BD1


IGBT Transistors 28 Amps 1200V 3.50 Rds
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IXYS 0
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AUD 16.36

Multiples of: 1

Single1200 V +/- 20 V    TO - 247 AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh28n120
IKFW60N60DH3E


IGBT Transistors HOME APPLIANCES 14
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Infineon 0
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AUD 16.5664

Multiples of: 1

                
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