IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXH50N60B3D1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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IXYS 291
Ships to you
between Thu. 09 Jul to Mon. 13 Jul
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AUD 12.7352

Multiples of: 1

 600 V1.55 V20 V120 A100 nA  TO - 247 - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxxh50n60
IXYH24N170C


IGBT Transistors 1700V/58A High Volt
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IXYS 0
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AUD 13.7753

Multiples of: 1

Single1700 V3.5 V20 V58 A25 uA  TO - 247AD - 3 SiThrough Hole500 W- 55 C+ 175 CHigh Voltage
IKQ120N60T


IGBT Transistors INDUSTRY 14
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Infineon 0
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AUD 13.7786

Multiples of: 1

                
IXYH75N120B4


Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247
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IXYS 0
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AUD 13.8119

Multiples of: 1

      1.15 kW   Genx4, XPT     
IRG7PSH50UDPBF


International Rectifier IGBT Transistors
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AUD 13.86

Multiples of: 1

Single1.2 kV2 V+/- 30 V116 A+/- 200 nA  TO - 274AA - 3TubeSiThrough Hole462 W- 55 C+ 150 C 
IRGP50B60PD1PBF


IGBT Transistors 600V Warp2 150kHz
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Infineon 0
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AUD 13.9674

Multiples of: 1

Single600 V2.35 V+/- 20 V75 A 390 W TO - 247TubeSiThrough Hole390 W- 55 C  
SKW25N120FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 0
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AUD 14.1556

Multiples of: 30

        TO - 247 - 3Tube      
IKY50N120CH3XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 0
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AUD 14.211

Multiples of: 1

Single1200 V2 V20 V100 A100 nA  TO 247 - 4 - 2TubeSiThrough Hole652 W- 40 C+ 175 C 
IXGT25N160


IGBT Transistors 75 Amps 1600V 2.5 Rds
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IXYS 0
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AUD 14.2507

Multiples of: 1

Single1600 V2.5 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt25n160
STGWA40H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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STMicroelectronics 0
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AUD 14.5151

Multiples of: 1

                
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