IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKQ100N60T


IGBT Transistors INDUSTRY 14
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AUD 13
Multiples of: 1

                
STGWA60V60DWFAG


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 0
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AUD 13.0685
Multiples of: 1

         Tube      
IXYJ20N120C3D1


IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT
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IXYS 0
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AUD 13.0894
Multiples of: 1

Single1200 V4 V30 V21 A100 nA105 W TO - 247 - 3TubeSiThrough Hole105 W- 55 C+ 150 CIxyj20n120
IXGA8N100


IGBT Transistors 16 Amps 1000V 2.7 Rds
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IXYS 0
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AUD 13.2043
Multiples of: 1

Single1000 V2.7 V+/- 20 V    TO - 263 - 3Tube Smd/Smt - 55 C+ 150 CIxga8n100
IRGP4690DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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AUD 13.2415
Multiples of: 1

Single600 V2.1 V+/- 20 V140 A200 nA  TO - 247AC - 3Tube Through Hole454 W- 55 C+ 175 C 
IXDR30N120


IXYS IGBT Transistors 30 Amps 1200V
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AUD 13.2441
Multiples of: 1

Single1.2 kV2.4 V+/- 20 V50 A500 nA  Isoplus247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CIxdr30n120
IXSH30N60CD1


IGBT Transistors 55 Amps 600V 2.5 Rds
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IXYS 0
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AUD 13.2785
Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxsh30n60
FGL40N120AND


Transistor: IGBT; 1.2kV; 40A; 200W; TO264
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ON Semiconductor 0
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AUD 13.3228
Multiples of: 1

      200 W         
IKW50N120CS7XKSA1


IGBT Transistors INDUSTRY 14
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 13.3328
Multiples of: 1

                
IXDR30N120D1


IGBT Transistors 30 Amps 1200V
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IXYS 0
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AUD 13.3384
Multiples of: 1

Single1.2 kV2.4 V+/- 20 V50 A500 nA  Isoplus247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CIxdr30n120
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