IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW75N60TA


Infineon Technologies IGBT Transistors 600V 75A 100nA
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Infineon 0
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AUD 13.4318

Multiples of: 1

Single600 V1.95 V20 V75 A100 nA  TO - 247TubeSiThrough Hole428 W- 40 C+ 150 CIkw75n60
FGY60T120SQDN


Trans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 13.5177

Multiples of: 1

Single1200 V1.7 V25 V120 A200 nA  TO - 247 - 3TubeSiThrough Hole517 W- 55 C+ 175 C 
IKFW90N60EH3XKSA1


IGBT Transistors High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 13.5625

Multiples of: 1

Single600 V1.85 V20 V77 A100 nA  TO - 247 - 3TubeSiThrough Hole178 W- 40 C+ 175 C600V Trenchstop
IXGH32N170A


IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A
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IXYS 0
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AUD 13.59

Multiples of: 30

Single1.7 kV4 V20 V32 A100 nA  TO - 247AD - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxgh32n170
STGW60H65DFB-4


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 60 A high speed
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STMicroelectronics 0
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AUD 13.623

Multiples of: 1

Single650 V1.6 V20 V80 A250 uA  TO - 247 - 4 SiThrough Hole283 W- 55 C+ 175 CStgw60h65dfb - 4
IXYH40N120B3


IGBT Transistors IGBT XPT-GENX3
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IXYS 0
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AUD 13.6332

Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole    
IXDH30N120D1


IGBT Transistors 30 Amps 1200V
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IXYS 0
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AUD 13.7

Multiples of: 1

Single1.2 kV2.4 V+/- 20 V60 A500 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxdh30n120
IKW40T120


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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AUD 13.7218

Multiples of: 1

Single1200 V1.7 V+/- 20 V75 A600 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 150 CIkw40t120
IKY75N120CS6XKSA1


Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
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Infineon 0
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AUD 13.7355

Multiples of: 1

      440 W   Trenchstop 6     
RGTVX6TS65DGC11


IGBT Transistors IGBT WITH LOW COLLECTOR - EMIT
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ROHM 0
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AUD 13.7394

Multiples of: 1

Single650 V1.5 V30 V144 A200 nA  TO - 247 - 3TubeSiThrough Hole404 W- 40 C+ 175 C 
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