IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKQ50N120CH3XKSA1


Transistor: IGBT; 1200V; 50A; 173W; TO247-3; Series: H3
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Infineon 57
Ships to you
between Thu. 15 Oct to Tue. 20 Oct
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AUD 10.6608

Multiples of: 1

      173 W        H3
STGB30H60DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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STMicroelectronics 0
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AUD 8.7549

Multiples of: 1

Single600 V1.55 V+/- 20 V60 A+/- 250 nA  D2PAK - 3ReelSiSmd/Smt260 W- 55 C+ 175 CStgb30h60dfb
IXSH24N60AU1


IGBT Transistors 48 Amps 600V 2.7 Rds
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IXYS 0
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AUD 8.8029

Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxsh24n60
AUIRGP35B60PD-E


International Rectifier IGBT Transistors AUTO 600V WARP2 150KHZ 84mOhm
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Infineon 0
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AUD 8.8082

Multiples of: 400

Single600 V2.15 V+/- 20 V60 A  Aec - Q101TO - 247AD - 3TubeSiThrough Hole308 W- 55 C  
HGTG40N60B3


IGBT Transistors 600V N-Channel IGBT UFS Series
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ON Semiconductor 0
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AUD 8.8114

Multiples of: 1

Single600 V1.4 V+/- 20 V70 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole290 W- 55 C+ 150 CHgtg40n60b3
IKZ75N65EH5


IGBT Transistors INDUSTRY 14
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Infineon 0
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AUD 8.8462

Multiples of: 1

                
IKZ75N65NH5


IGBT Transistors INDUSTRY 14
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Infineon 0
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AUD 8.8462

Multiples of: 1

                
IXYA50N65C3


IGBT Transistors 650V/130A XPT C3-Class TO-263
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IXYS 0
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AUD 8.8629

Multiples of: 1

Single650 V2.1 V30 V130 A100 nA  TO - 263 - 2TubeSiSmd/Smt600 W- 55 C+ 175 CIxya50n65
IRG4PC30UDPBF


International Rectifier IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT
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Infineon 0
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AUD 8.8656

Multiples of: 1

Single600 V2.1 V+/- 20 V23 A 100 W TO - 247TubeSiThrough Hole100 W- 55 C+ 150 C 
IXGT10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS 0
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AUD 8.87

Multiples of: 30

Single1.7 kV4.5 V20 V10 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxgt10n170
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