IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWA30H65DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 5.56

Multiples of: 1

Single650 V1.55 V20 V60 A250 nA  TO - 247 - 3 SiThrough Hole260 W- 55 C+ 175 CStgwa30h65dfb
RGW00TK65GVC11


IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
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AUD 5.5629

Multiples of: 450

Single650 V1.5 V30 V45 A200 nA  TO - 3PFMTubeSiThrough Hole89 W- 40 C+ 175 C 
IXA20I1200PB


IGBT Transistors XPT IGBT
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IXYS 0
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AUD 5.5785

Multiples of: 1

Single1200 V1.8 V20 V33 A500 nA  TO - 220 - 3TubeSiThrough Hole130 W- 55 C+ 150 CIxa20i1200
IHW30N120R3


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 5.6157

Multiples of: 1

Single1200 V1.55 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole349 W- 40 C+ 175 CRc
AIKW50N65DH5XKSA1


Transistor: IGBT; 650V; 53.5A; 136W; TO247-3
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Infineon 0
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AUD 5.6157

Multiples of: 1

      136 W   Trenchstop 5     
IRG4PC40UD-EPBF


IGBT Transistors 600V UltraFast 8-60kHz
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Infineon 0
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AUD 5.6184

Multiples of: 1

Single600 V2.1 V+/- 20 V40 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
IHW30N160R2


Transistor: IGBT; 1600V; 30A; 312W; TO247-3
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Infineon 0
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AUD 5.6211

Multiples of: 1

      312 W         
SPT50N65F1A1T8TL


TO-247-3 IGBTs ROHS
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AUD 5.6361

Multiples of: 1

                
IXGH36N60B3D1


IGBT Transistors 36 Amps 600V
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IXYS 0
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AUD 5.6418

Multiples of: 1

Single600 V1.8 V+/- 20 V200 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh36n60
RGW40TS65DGC11


ROHM Semiconductor
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AUD 5.6692

Multiples of: 1

                
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