IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
HGTG40N60A4


Transistor: IGBT; 600V; 63A; 625W; TO247
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AUD 7.1241

Multiples of: 1

      625 W         
STGW30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics 0
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AUD 7.1396

Multiples of: 1

Single600 V1.85 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
IRGP4069DPBF


Transistor: IGBT; 600V; 76A; 268W; TO247-3
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Infineon 0
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AUD 7.1921

Multiples of: 1

Single600 V1.85 V+/- 20 V76 A 268 W TO - 247TubeSiThrough Hole268 W- 55 C  
IXDP35N60B


IXYS IGBT Transistors 35 Amps 600V
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AUD 7.216

Multiples of: 1

Single600 V2.1 V+/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CIxdp35n60b
IKW50N65ET7


TO-247-3 IGBTs ROHS
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AUD 7.2304

Multiples of: 1

                
FGH75N60UFTU


IGBT Transistors N-CH / 600V 75A FS Planar
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ON Semiconductor 0
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AUD 7.2329

Multiples of: 1

Single600 V +/- 20 V    TO - 247AB - 3Tube Through Hole - 55 C+ 150 CFgh75n60s
IXBH5N160G


IGBT Transistors 5 Amps 1600V
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IXYS 0
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AUD 7.2705

Multiples of: 1

Single1.6 kV4.9 V20 V5.7 A100 nA  TO - 247 - 3TubeSiThrough Hole68 W- 55 C+ 150 CIxbh5n160
IXDH35N60B


IXYS IGBT Transistors 35 Amps 600V
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IXYS 0
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AUD 7.28

Multiples of: 1

Single600 V2.1 V+/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxdh35n60b
IRGP4069-EPBF


IGBT Transistors 600V 76.000A TO-247
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Infineon 0
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AUD 7.296

Multiples of: 1

 600 V1.85 V 76 A   TO - 247 - 3Tube Through Hole268 W   
AOK60B60D1


Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ
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AUD 7.3254

Multiples of: 1

  1.85 V   167 W         
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