IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP20B120U-EP


IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 6.7706

Multiples of: 1

Single1.2 kV3.45 V+/- 20 V40 A100 nA300 W TO - 247TubeSiThrough Hole300 W- 55 C+ 150 C 
APT20GN60BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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AUD 6.7846

Multiples of: 1

      136 W   Field Stop     
SPT40N120F1AT8TL


TO-247 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS 0
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AUD 6.8001

Multiples of: 1

                
IRG4PC50FDPBF


Transistor: IGBT; 600V; 70A; 200W; TO247-3
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AUD 6.8018

Multiples of: 25

      200 W         
IXGH10N60AU1


IGBT Transistors G-series A,B,C
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AUD 6.8529

Multiples of: 1

         Tube     Ixgh10n60
IXSH30N60B2D1


IGBT Transistors 30 Amps 600V 2.5 Rds
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AUD 6.8529

Multiples of: 1

Single600 V2 V+/- 20 V +/- 100 nA250 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh30n60
IXSA20N60B2D1


IGBT Transistors 20 Amps 600V 2.5 Rds
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AUD 6.8542

Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA190 W TO - 263 - 3Tube Smd/Smt - 55 C+ 150 CIxsa20n60
IRG8P25N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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AUD 6.8566

Multiples of: 104

Single1200 V1.7 V30 V40 A100 nA180 W TO - 247AC - 3TubeSiThrough Hole180 W- 40 C+ 150 C 
IKY75N120CS6XKSA1


Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
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AUD 6.8631

Multiples of: 1

      440 W   Trenchstop 6     
IKQ75N120CS6


IGBT Transistors INDUSTRY 14
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AUD 6.8902

Multiples of: 1

                
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