IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB20N120IHWG


ON Semiconductor IGBT Transistors LC IH RC OSV
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 165491
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AUD 4.0578
Multiples of: 1

Single1.2 kV2.2 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole341 W- 40 C+ 175 C 
STGP10NC60KD


Transistor: IGBT; 600V; 10A; 65W; TO220AB
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STMicroelectronics 146470
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AUD 0.7606
Multiples of: 1000

      65 W         
NGTB20N60L2TF1G


ON Semiconductor IGBT Transistors 600V 20A IGBT TO-3PF
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ON Semiconductor 54824
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AUD 2.7519
Multiples of: 1

Single600 V1.45 V20 V40 A100 nA  TO - 3PF - 3LTubeSiThrough Hole64 W- 55 C+ 175 CNgtb20n60l2tf1g
STGF7NB60SL


IGBT Transistors N-CH 7 A - 600V POWERMESH IGBT
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STMicroelectronics 49743
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AUD 1.2767
Multiples of: 1

Single600 V1.2 V+/- 20 V15 A+/- 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf7nb60sl
STGWA25H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics 48888
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AUD 4.181
Multiples of: 600

Single1200 V2.5 V20 V50 A250 nA    SiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGD8NC60KDT4


STMicroelectronics IGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
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STMicroelectronics 48500
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AUD 0.8354
Multiples of: 2500

Single600 V +/- 20 V    DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgd8nc60kd
STGWA15M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 45978
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AUD 3.4272
Multiples of: 600

Single1200 V1.85 V20 V30 A250 nA  TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 C900 - 1300V Igbts
HGTD1N120BNS9A


IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
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ON Semiconductor 36856
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AUD 1.1115
Multiples of: 1

Single1200 V2.5 V+/- 20 V5.3 A+/- 250 nA60 W TO - 252AA - 3ReelSiSmd/Smt60 W- 55 C+ 150 CHgtd1n120
SGL160N60UFDTU


Transistor: IGBT; 600V; 80A; 100W; TO264
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ON Semiconductor 35567
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AUD 8.2789
Multiples of: 1

                
FGAF20N60SMD


Fairchild Semiconductor IGBT Transistors 600 V 40 A 62.5 W
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ON Semiconductor 304
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AUD 3.6847
Multiples of: 1

 600 V1.9 V20 V40 A400 nA  TO - 3PFTubeSiThrough Hole62.5 W- 55 C+ 175 CFgaf20n60
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