SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTBG060N090SC1


SiC MOSFETs SIC MOS 60MOHM 900V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 460
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AUD 12.5243
Multiples of: 1

SMD/SMT N - Channel1 Channel900 V44 A84 mOhms- 8 V , + 22 V4.3 V88 nC- 55 C+ 175 C211 WEnhancement EliteSiC
G3F65MT12K


SiC MOSFETs 1200V 65mohm TO-247-4 G3F SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor 458
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AUD 9.6643
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV 65 mOhms      Enhancement  
IXSJ80N120R1


SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 455
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AUD 35.7657
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV85 A22.5 mOhms- 4 V , + 21 V4.8 V154 nC- 40 C+ 150 C266 WEnhancement  
IXSJ43N120R1


SiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 453
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AUD 19.47
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV45 A47 mOhms- 4 V , + 21 V4.8 V79 nC- 40 C+ 150 C142 WEnhancement  
NTBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 448
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AUD 12.0057
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancement EliteSiC
C3M0032120J2-TR


SiC MOSFETs SiC, MOSFET, 32mohm, 1200V, TO-263-7 XL T&R, Industrial
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Wolfspeed 446
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AUD 11.11
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV68 A55 mOhms- 8 V , + 19 V3.8 V108 nC- 40 C+ 175 C341 WEnhancement  
G3F34MT12K


SiC MOSFETs 1200V 34mohm TO-247-4 G3F SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor 442
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AUD 17.7886
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV 34 mOhms      Enhancement  
IMW65R048M1HXKSA1


SiC MOSFETs Y
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Infineon 441
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AUD 7.6371
Multiples of: 1

Through Hole N - Channel1 Channel650 V39 A64 mOhms- 5 V , + 23 V5.7 V33 nC- 55 C+ 150 C125 WEnhancement CoolSiC
DIW065SIC049


SiC MOSFETs
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Diotec 436
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AUD 11.2671
Multiples of: 1

Through Hole N - Channel1 Channel650 V60 A49 mOhms- 5 V , + 18 V4 V128 nC- 55 C+ 175 C550 WEnhancement DIW065SIC049
NTH4L030N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L
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ON Semiconductor 341
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AUD 11.99
Multiples of: 1

Through Hole   1.2 kV 30 Ohms        EliteSiC
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