MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD031N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
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Infineon 2070
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AUD 0.6633
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            Optimos 3      
KNG8104A


DFN-8(3x3) MOSFETs ROHS
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KIA 2070
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AUD 0.086
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DMP4015SK3Q-13


MOSFET P-Ch Enh Mode FET
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Diodes Incorporated 2069
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AUD 0.9152
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35 A40 V11 mOhmsP - Channel 1.5 V- 55 C+ 150 C3.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V47.5 nCEnhancementAec - Q101 
20N03


TO-252 MOSFETs ROHS
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Juxing Electronic Technology 2066
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AUD 0.08
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DMP2022LSS-13


P-Channel 20 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO
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Diodes Incorporated 2065
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AUD 0.5579
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10 A20 V13 mOhmsP - Channel 600 mV- 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V56.9 nCEnhancement  
DMNH4006SK3Q-13


MOSFET 40V N-Ch Enh Mode AEC-Q101
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Diodes Incorporated 2065
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AUD 0.9851
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140 A40 V6 mOhmsN - Channel 2 V- 55 C+ 175 C3.6 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V51 nCEnhancementAec - Q101 
BSZ097N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 40A TSDSON-8
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Infineon 2063
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AUD 1.0327
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40 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel+/- 20 V22 nCEnhancement Optimos
Hot IRFR1N60APBF


MOSFET N-Chan 600V 1.4 Amp
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Vishay 1972
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AUD 0.2895
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1.4 A600 V7 OhmsN - Channel 4 V- 55 C+ 150 C36 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 30 V , 30 V14 nCEnhancement  
CJU40P04A


40V 40A 74W 10.5mΩ@10V,10A 1.5V@250uA 150pF@25V P Channel 2800pF@25V 23nC@4.5V -55℃~+150℃@(Tj) TO-252-2 MOSFETs ROHS
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Changjing Electronics Technology 1857
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AUD 0.4241
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HYG025N06LS1D


60V 160A 2.6mΩ@10V,40A 125W 2.1V@250uA 10.2pF@25V N Channel 3915pF@25V 58.3nC@10V +175℃@(Tj) TO-252-2L MOSFETs ROHS
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HuaYi 1770
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AUD 0.6365
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