MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO6604


SOT-23-6 MOSFETs ROHS
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Youtai 4976
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AUD 0.0854
Multiples of: 5

                   
PTD3004


MOSFET N Channel 30V 50A(Tc) 2.5V @ 250uA 10mO @ 30A,10V TO-252 RoHS
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PUOLOP 2085
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AUD 0.1979
Multiples of: 5

                   
FQD7P20TM


mosfet p trench 200v 5.7a (tc) 5v @ 250ua 690 m @ 2.85a,10v to-252-3 rohs
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ON Semiconductor 2085
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AUD 0.7968
Multiples of: 1

   P Channel               
STF40N60M2


MOSFET Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET
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STMicroelectronics 2085
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AUD 4.6437
Multiples of: 50

34 A650 V88 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220 - 3TubeSi1 Channel- 25 V , 25 V57 nCEnhancement MDmesh
LWS1H45A4


TO-252 MOSFETs ROHS
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Lewa Micro 2084
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AUD 0.3728
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NX3020NAKS-QX


MOSFETs NX3020NAKS-Q/SOT363/SC-88
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Nexperia 2083
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AUD 0.1199
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220 mA30 V3 OhmsN - Channel 1.5 V- 55 C+ 175 C310 mWSMD/SMTTSSOP - 6Reel , Cut TapeSi2 Channel20 V210 pCEnhancement  
WGD65R550G


TO-252 MOSFETs ROHS
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Wild Goose 2083
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AUD 0.4989
Multiples of: 1

                   
SI4435FDY-T1-GE3


MOSFET -30V Vds 20V Vgs SO-8
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Vishay 2082
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AUD 0.3699
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12.6 A30 V30 mOhmsP - Channel 2.2 V- 55 C+ 150 C4.8 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V13.5 nCEnhancement  
IPI045N10N3 G


N-Channel 100 V 137A (Tc) 214W (Tc) Through Hole PG-TO262-3-1
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Infineon 2082
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AUD 2.4299
Multiples of: 1

100 A100 V3.9 mOhmsN - Channel 2 V- 55 C+ 175 C214 WThrough HoleTO - 262TubeSi1 Channel20 V117 nCEnhancement Optimos
BSZ22DN20NS3 G


Infineon Technologies MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3
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Infineon 2054
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AUD 0.6551
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7 A200 V194 mOhmsN - Channel 2 V- 55 C+ 150 C34 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V5.6 nCEnhancement  
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