MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX3020NAKW,115


N-Channel 30 V 180mA (Ta) 260mW (Ta), 1.1W (Tc) Surface Mount SOT-323
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Nexperia 5084
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AUD 0.0394
Multiples of: 1

180 mA30 V2.7 OhmsN - Channel- 20 V1.2 V- 55 C+ 150 C260 mWSmd/SmtSC - 70 - 3Reel   0.34 nC   
TPIRFR9024TRPBF


TO-252 MOSFETs ROHS
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TECH PUBLIC 2260
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AUD 0.4352
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RS7E200BGTB1


MOSFETs DFN5060 N-CH 30V 390A
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ROHM 2260
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AUD 3.2836
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390 A30 V670 uOhmsN - Channel 2.5 V- 55 C+ 150 C180 WSMD/SMTDFN5060 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V135 nCEnhancement  
SIJ482DP-T1-GE3


N-Channel 80 V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2259
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AUD 1.4761
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60 A80 V6.2 mOhmsN - Channel 1.5 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK SO - 8LReelSi1 Channel10 V47 nCEnhancement Trenchfet, Powerpak
FDB120N10


MOSFET 100V N-Chan 12Mohm PowerTrench
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ON Semiconductor 2259
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AUD 2.3313
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   N - Channel  - 55 C+ 175 C Smd/SmtD2PAKReel       
SIRS5702DP-T1-RE3


MOSFETs N-CHANNEL 150-V (D-S) MOSFET
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Vishay 2259
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AUD 2.906
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119 A150 V7.2 mOhmsN - Channel 4 V- 55 C+ 150 C245 WSMD/SMTPOWERPAK - SO - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V58 nCEnhancement TrenchFET
AOD514


MOSFET N CH 30V 54A TO252 DPAK
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Alpha & Omega 2258
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AUD 0.4191
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           -       
IPD25N06S240ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 2258
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AUD 0.5785
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
FDMS4435BZ


MOSFET P-Channel PowerTrench MOSFET
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ON Semiconductor 2258
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AUD 1.4
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9 A30 V20 mOhmsP - Channel   + 150 C39 WSmd/SmtPOWER 56ReelSi1 Channel    Powertrench
IPB60R165CP


MOSFET COOL MOS PWR TRANS MAX 650V
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Infineon 2258
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AUD 3.0045
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21 A600 V150 mOhmsN - Channel 2.5 V- 55 C+ 150 C192 WSmd/SmtTO - 263ReelSi1 Channel20 V52 nCEnhancement Coolmos
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