MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TM50P02D


TO-252-3L MOSFETs ROHS
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Tritech-MOS 2318
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AUD 0.1997
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RW1A025APT2CR


ROHM Semiconductor MOSFET
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ROHM 2318
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AUD 0.2376
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- 2.5 A- 12 V180 mOhmsP - Channel - 300 mV- 55 C+ 150 C700 mWSmd/SmtSOT - 563 - 6Reel-1 Channel0 V To - 8 V16 nCEnhancement  
IPA50R280CEXKSA2


Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
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Infineon 2318
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AUD 0.7716
Multiples of: 1

            Coolmos      
SQ4080EY-T1_BE3


MOSFETs N-CHANNEL 150-V (D-S) 175C MOSFET
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Vishay 2318
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AUD 1.0278
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           Reel , Cut TapeSi      
TPC8067-H,LQ(S


Toshiba MOSFET N-Ch 30V FET 9A 1.9W 690pF
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Toshiba 2317
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AUD 0.4189
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9 A30 V33 mOhmsn - channel    1.9 Wsmd/smtSOP - 8Reelsi1 channel     
SH8M14TB1


ROHM Semiconductor MOSFET 4V DRIVE TYP NP CH MID PWR MOSFET
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ROHM 2317
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AUD 1.1409
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9 A , 7 A30 V15 mOhms , 21.5 mOhmsN - Channel, P - Channel 1 v , 2.5 V- 55 C+ 150 C2 WSmd/SmtSOP - 8ReelSi2 Channel20 V8.5 nC , 18 nCEnhancement  
STS10P4LLF6


STMicroelectronics MOSFET
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STMicroelectronics 2316
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AUD 0.6978
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10 A40 V12.5 mOhmsP - Channel 1 V + 150 C2.7 WSmd/SmtSO - 8ReelSi1 Channel20 V34 nCEnhancement Stripfet
SQS161ELNW-T1_GE3


MOSFETs Automotive P-Channel 60 V (D-S) 175C MOSFET
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Vishay 2316
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AUD 0.8193
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250 uA60 V20 mOhmsP - Channel 2 V- 55 C+ 175 C119 WSMD/SMT1212 - 8SLW Si3 Channel- 10 V , + 10 V30 nCEnhancement  
SPD03N50C3ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 2316
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AUD 0.8751
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   N Channel      TO - 252 - 3Reel       
HSM24P03


30V 24A 3.8mΩ@10V,17A 2.1W 1.6V@250uA 410pF@25V P Channel 6.24nF@25V 110nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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HUASHUO 2308
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AUD 0.5186
Multiples of: 1

                   
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