MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOD442


TO-252-2(DPAK) MOSFETs ROHS
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TECH PUBLIC 2347
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AUD 0.2414
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SP60N13TH


TO-252 MOSFETs ROHS
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Siliup 2342
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AUD 0.1124
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PJM40P40TE


TO-252 MOSFETs ROHS
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Pingjingsemi 2342
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AUD 0.2551
Multiples of: 5

                   
IRFR310PBF


N-Channel 400 V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 2342
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AUD 0.2852
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1.7 A400 V3.6 OhmsN - Channel 2 V- 55 C+ 150 C25 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 20 V , 20 V12 nCEnhancement  
SQJ114ELP-T1_GE3


MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 2342
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AUD 0.77
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58 A100 V12.1 mOhmsN - Channel 2.5 V- 55 C+ 175 C115 WSMD/SMTSO - 8LReel , Cut TapeSi1 Channel- 20 V , + 20 V50 nCEnhancement TrenchFET
STD5NK50ZT4


Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; DPAK
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STMicroelectronics 2342
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AUD 0.8634
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            Supermesh      
STD12N50M2


STMicroelectronics MOSFET
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STMicroelectronics 2342
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AUD 1.0108
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10 A500 V325 mOhmsN - Channel 2 V- 55 C+ 150 C85 WSmd/SmtDPAK - 3Reel  30 V15 nCEnhancement  
R6010YND3TL1


MOSFETs 600V 10A TO-252, High-speed switching Power MOSFET
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ROHM 2342
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AUD 1.5236
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10 A600 V390 mOhmsN - Channel 6 V- 55 C+ 150 C92 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V15 nCEnhancement  
SIR182LDP-T1-RE3


MOSFETs POWRPK N CHAN 60V
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Vishay 2341
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AUD 1.5581
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            Si      
AP2306GN


MOSFET N Trench 20V 5.3A 1.25V @ 250uA 30 mΩ @ 5.5A,10V SOT-23 RoHS
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APEC 2332
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AUD 0.1525
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